CA978281A - Junction transistor with graded impurity concentration in the high resistivity portion of its collector zone - Google Patents
Junction transistor with graded impurity concentration in the high resistivity portion of its collector zoneInfo
- Publication number
- CA978281A CA978281A CA167,643A CA167643A CA978281A CA 978281 A CA978281 A CA 978281A CA 167643 A CA167643 A CA 167643A CA 978281 A CA978281 A CA 978281A
- Authority
- CA
- Canada
- Prior art keywords
- impurity concentration
- junction transistor
- high resistivity
- collector zone
- resistivity portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29097672A | 1972-09-21 | 1972-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA978281A true CA978281A (en) | 1975-11-18 |
Family
ID=23118293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA167,643A Expired CA978281A (en) | 1972-09-21 | 1973-03-30 | Junction transistor with graded impurity concentration in the high resistivity portion of its collector zone |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4971873A (en) |
| BE (1) | BE804932A (en) |
| CA (1) | CA978281A (en) |
| DE (1) | DE2347067A1 (en) |
| FR (1) | FR2200625B1 (en) |
| GB (1) | GB1414066A (en) |
| IT (1) | IT993337B (en) |
| NL (1) | NL7312775A (en) |
| SE (1) | SE391606B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543736B1 (en) * | 1983-03-31 | 1986-05-02 | Thomson Csf | METHOD FOR MANUFACTURING A HIGH-VOLTAGE POWER TRANSISTOR AT OPENING |
| JP2559800B2 (en) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | Transistor evaluation method |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/en unknown
- 1973-09-17 BE BE135714A patent/BE804932A/en unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/en active Pending
- 1973-09-20 IT IT2917773A patent/IT993337B/en active
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4971873A (en) | 1974-07-11 |
| DE2347067A1 (en) | 1974-03-28 |
| IT993337B (en) | 1975-09-30 |
| SE391606B (en) | 1977-02-21 |
| GB1414066A (en) | 1975-11-12 |
| BE804932A (en) | 1974-01-16 |
| NL7312775A (en) | 1974-03-25 |
| FR2200625A1 (en) | 1974-04-19 |
| FR2200625B1 (en) | 1979-08-31 |
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