JPS645070A - Vertical insulated gate field effect transistor - Google Patents
Vertical insulated gate field effect transistorInfo
- Publication number
- JPS645070A JPS645070A JP62160612A JP16061287A JPS645070A JP S645070 A JPS645070 A JP S645070A JP 62160612 A JP62160612 A JP 62160612A JP 16061287 A JP16061287 A JP 16061287A JP S645070 A JPS645070 A JP S645070A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- regions
- thick part
- type
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
PURPOSE:To reduce an ON resistance and avoid punch through by a method wherein a thick part is provided at a part of a gate insulating film apart from base regions and a high impurity concentration region with a conductivity type same as that of a substrate is provided in the main surface of the substrate directly under the thick part of the gate insulating film. CONSTITUTION:On the main surface of a substrate composed of an N<+>type semiconductor foundation board 1 made of silicon and an N<->type epitaxial layer 2 built up on the foundation board 1, P-type base regions 8-1 and 8-2 are provided and, at the same time, a gate insulating film 13 is formed on the main surface of the substrate including the base regions 8-1 and 8-2. A thick part 6 is provided in the film 13 at the position apart from the regions 8-1 and 8-2 and, further, an N-type region 5' which has a higher impurity concentration than its surroundings is provided in the substrate directly under the thick part 6 apart from the regions 8-1 and 8-2. With this constitution, the spread of a depletion layer between the regions 8-1 and 8-2 and the substrate can be suppressed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160612A JPS645070A (en) | 1987-06-26 | 1987-06-26 | Vertical insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62160612A JPS645070A (en) | 1987-06-26 | 1987-06-26 | Vertical insulated gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645070A true JPS645070A (en) | 1989-01-10 |
Family
ID=15718699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62160612A Pending JPS645070A (en) | 1987-06-26 | 1987-06-26 | Vertical insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645070A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02216871A (en) * | 1989-02-17 | 1990-08-29 | Fuji Electric Co Ltd | Power mosfet |
EP0747968A1 (en) * | 1995-06-07 | 1996-12-11 | STMicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
US5612566A (en) * | 1993-11-30 | 1997-03-18 | Siliconix Incorporated | Bidirectional blocking lateral MOSFET with improved on-resistance |
EP1455397A2 (en) * | 2002-12-30 | 2004-09-08 | STMicroelectronics S.r.l. | Vertical MOS device and method of making the same |
US7067363B2 (en) * | 2002-12-30 | 2006-06-27 | Stmicroelectronics S.R.L. | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density |
WO2008108360A1 (en) | 2007-03-05 | 2008-09-12 | Toyo Ink Mfg. Co., Ltd. | Composition for battery |
JP2009032919A (en) * | 2007-07-27 | 2009-02-12 | Sumitomo Electric Ind Ltd | Oxide film field-effect transistor and manufacturing method therefor |
WO2011013380A1 (en) * | 2009-07-31 | 2011-02-03 | Fuji Electric Systems Co., Ltd. | Manufacturing method of semiconductor apparatus and semiconductor apparatus |
CN102148164A (en) * | 2011-03-10 | 2011-08-10 | 上海宏力半导体制造有限公司 | Formation method for VDMOS (vertical double-diffused metal oxide semiconductor) device |
JP2012124536A (en) * | 2012-03-23 | 2012-06-28 | Sumitomo Electric Ind Ltd | Metal oxide semiconductor field effect transistor and manufacturing method of the same |
CN113506829A (en) * | 2021-07-05 | 2021-10-15 | 西安卫光科技有限公司 | Step gate dielectric layer structure and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103361A (en) * | 1980-10-29 | 1982-06-26 | Siemens Ag | Mis controlled semiconductor element |
JPS59151466A (en) * | 1983-02-17 | 1984-08-29 | Nissan Motor Co Ltd | Vertical type metal oxide semiconductor field-effect transistor |
JPS6225457A (en) * | 1985-07-25 | 1987-02-03 | Tdk Corp | Manufacture of vertical semiconductor device |
-
1987
- 1987-06-26 JP JP62160612A patent/JPS645070A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103361A (en) * | 1980-10-29 | 1982-06-26 | Siemens Ag | Mis controlled semiconductor element |
JPS59151466A (en) * | 1983-02-17 | 1984-08-29 | Nissan Motor Co Ltd | Vertical type metal oxide semiconductor field-effect transistor |
JPS6225457A (en) * | 1985-07-25 | 1987-02-03 | Tdk Corp | Manufacture of vertical semiconductor device |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02216871A (en) * | 1989-02-17 | 1990-08-29 | Fuji Electric Co Ltd | Power mosfet |
US5612566A (en) * | 1993-11-30 | 1997-03-18 | Siliconix Incorporated | Bidirectional blocking lateral MOSFET with improved on-resistance |
EP0747968A1 (en) * | 1995-06-07 | 1996-12-11 | STMicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
EP1455397A2 (en) * | 2002-12-30 | 2004-09-08 | STMicroelectronics S.r.l. | Vertical MOS device and method of making the same |
US7067363B2 (en) * | 2002-12-30 | 2006-06-27 | Stmicroelectronics S.R.L. | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances and high scaling down density |
US7304335B2 (en) * | 2002-12-30 | 2007-12-04 | Stmicroelectronics S.R.L. | Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance and high scaling down density |
WO2008108360A1 (en) | 2007-03-05 | 2008-09-12 | Toyo Ink Mfg. Co., Ltd. | Composition for battery |
JP2009032919A (en) * | 2007-07-27 | 2009-02-12 | Sumitomo Electric Ind Ltd | Oxide film field-effect transistor and manufacturing method therefor |
WO2011013380A1 (en) * | 2009-07-31 | 2011-02-03 | Fuji Electric Systems Co., Ltd. | Manufacturing method of semiconductor apparatus and semiconductor apparatus |
JP2012527114A (en) * | 2009-07-31 | 2012-11-01 | 富士電機株式会社 | Semiconductor device manufacturing method and semiconductor device |
US9136352B2 (en) | 2009-07-31 | 2015-09-15 | Fuji Electric Co., Ltd. | Manufacturing method of semiconductor apparatus and semiconductor apparatus |
US9312379B2 (en) | 2009-07-31 | 2016-04-12 | Fuji Electric Co., Ltd. | Manufacturing method of semiconductor apparatus and semiconductor apparatus |
US9496370B2 (en) | 2009-07-31 | 2016-11-15 | Fuji Electric Co., Ltd. | Manufacturing method of semiconductor apparatus and semiconductor apparatus |
CN102148164A (en) * | 2011-03-10 | 2011-08-10 | 上海宏力半导体制造有限公司 | Formation method for VDMOS (vertical double-diffused metal oxide semiconductor) device |
JP2012124536A (en) * | 2012-03-23 | 2012-06-28 | Sumitomo Electric Ind Ltd | Metal oxide semiconductor field effect transistor and manufacturing method of the same |
CN113506829A (en) * | 2021-07-05 | 2021-10-15 | 西安卫光科技有限公司 | Step gate dielectric layer structure and manufacturing method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1153428A (en) | Improvements in Semiconductor Devices. | |
JPS645070A (en) | Vertical insulated gate field effect transistor | |
JPS6453574A (en) | Semiconductor device | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS6439069A (en) | Field-effect transistor | |
GB1108774A (en) | Transistors | |
JPS55165669A (en) | Bipolar-mos device | |
JPS5691470A (en) | Semiconductor | |
GB1494149A (en) | Integrated circuits | |
JPS5723259A (en) | Complementary type mos semiconductor device | |
JPS54141596A (en) | Semiconductor device | |
JPS5588378A (en) | Semiconductor device | |
GB1433667A (en) | Bipolar transistors | |
JPS54101289A (en) | Semiconductor device | |
GB1414066A (en) | Junction transistors | |
JPS6437861A (en) | Semiconductor integrated circuit | |
JPS5574181A (en) | Preparing junction type field effect transistor | |
JPS5538080A (en) | Semiconductor device | |
JPS5598870A (en) | Semiconductor device | |
JPS5518072A (en) | Mos semiconductor device | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS5529175A (en) | Planar type transistor | |
GB1295422A (en) | ||
JPS54113269A (en) | Production of junction-type electronic field effect transistor |