JPS5538080A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5538080A
JPS5538080A JP11205978A JP11205978A JPS5538080A JP S5538080 A JPS5538080 A JP S5538080A JP 11205978 A JP11205978 A JP 11205978A JP 11205978 A JP11205978 A JP 11205978A JP S5538080 A JPS5538080 A JP S5538080A
Authority
JP
Japan
Prior art keywords
type
layer
bpt
semiconductor device
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11205978A
Other languages
Japanese (ja)
Other versions
JPS5919474B2 (en
Inventor
Hisao Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11205978A priority Critical patent/JPS5919474B2/en
Publication of JPS5538080A publication Critical patent/JPS5538080A/en
Publication of JPS5919474B2 publication Critical patent/JPS5919474B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Abstract

PURPOSE:To compensate positive dependency of BPT collector current upon temperature by separating a junction type FET gate from a BPT base in a semiconductor device which combines a bipolar transistor (BPT) with an FET. CONSTITUTION:An N-type collector layer 3 is formed on the surface of a P-type base layer 2 made up on an N-type layer 1 and a groove 6 is mounted around the P-type base layer 2. Furthermore, an N-type semiconductor layer 5 is formed on the back side of the N-type collector layer 1 and a P-type gate layer 4a is equipped diffusing P-type impurities through a groove 6.
JP11205978A 1978-09-11 1978-09-11 semiconductor equipment Expired JPS5919474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11205978A JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11205978A JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5538080A true JPS5538080A (en) 1980-03-17
JPS5919474B2 JPS5919474B2 (en) 1984-05-07

Family

ID=14577003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11205978A Expired JPS5919474B2 (en) 1978-09-11 1978-09-11 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5919474B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972193A (en) * 1982-10-18 1984-04-24 アルプス電気株式会社 Electronic part inserting machine
JPS59107600A (en) * 1982-12-13 1984-06-21 アルプス電気株式会社 Device for accepting and delivering part in electronic part inserting machine
JP2020074362A (en) * 2015-11-10 2020-05-14 アナログ・デヴァイシズ・グローバル・アンリミテッド・カンパニー Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972193A (en) * 1982-10-18 1984-04-24 アルプス電気株式会社 Electronic part inserting machine
JPS59107600A (en) * 1982-12-13 1984-06-21 アルプス電気株式会社 Device for accepting and delivering part in electronic part inserting machine
JPH0145757B2 (en) * 1982-12-13 1989-10-04 Alps Electric Co Ltd
JP2020074362A (en) * 2015-11-10 2020-05-14 アナログ・デヴァイシズ・グローバル・アンリミテッド・カンパニー Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

Also Published As

Publication number Publication date
JPS5919474B2 (en) 1984-05-07

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