JPS5588372A - Lateral type transistor - Google Patents
Lateral type transistorInfo
- Publication number
- JPS5588372A JPS5588372A JP16601778A JP16601778A JPS5588372A JP S5588372 A JPS5588372 A JP S5588372A JP 16601778 A JP16601778 A JP 16601778A JP 16601778 A JP16601778 A JP 16601778A JP S5588372 A JPS5588372 A JP S5588372A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- base
- type
- gate electrodes
- protecting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent the occurrence of depletion layers and inversion layers in base regions by providing, on a protecting film above base regions between collector regions and emitter regions, gate electrodes to which higher voltage than that to the base regions is applied.
CONSTITUTION: A lateral transistor is formed of p-type collector regions 15 provided on n-type epitaxial layer base regions 12, p-type emitter regions 16, n+-type base contact regions 17, electrodes 20, 19 and 21 connected to these regions and a protecting film 23. Further, on the protecting film 23 and above the base regions 12 between the collector regions 15 and the emitter regions 16, gate electrodes 22 are provided. By connecting the gate electrodes 22 with, for example, a power source line which is on the highest potential of a semiconductor integrated circuit to make them always biased by higher potential than base potential, the occurrence of depletion layers or inversion layers on the surface can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601778A JPS5588372A (en) | 1978-12-26 | 1978-12-26 | Lateral type transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601778A JPS5588372A (en) | 1978-12-26 | 1978-12-26 | Lateral type transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5588372A true JPS5588372A (en) | 1980-07-04 |
JPS575060B2 JPS575060B2 (en) | 1982-01-28 |
Family
ID=15823360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16601778A Granted JPS5588372A (en) | 1978-12-26 | 1978-12-26 | Lateral type transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5588372A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58207672A (en) * | 1982-04-23 | 1983-12-03 | サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム | Semiconductor device |
JPH02192124A (en) * | 1989-01-19 | 1990-07-27 | Nec Corp | Bipolar transistor |
JPH0298633U (en) * | 1989-01-26 | 1990-08-06 | ||
US5204543A (en) * | 1990-03-29 | 1993-04-20 | Fujitsu Limited | Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS501677A (en) * | 1973-05-07 | 1975-01-09 |
-
1978
- 1978-12-26 JP JP16601778A patent/JPS5588372A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS501677A (en) * | 1973-05-07 | 1975-01-09 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58207672A (en) * | 1982-04-23 | 1983-12-03 | サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム | Semiconductor device |
JPH02192124A (en) * | 1989-01-19 | 1990-07-27 | Nec Corp | Bipolar transistor |
JPH0298633U (en) * | 1989-01-26 | 1990-08-06 | ||
US5204543A (en) * | 1990-03-29 | 1993-04-20 | Fujitsu Limited | Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein |
Also Published As
Publication number | Publication date |
---|---|
JPS575060B2 (en) | 1982-01-28 |
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