JPS5588372A - Lateral type transistor - Google Patents

Lateral type transistor

Info

Publication number
JPS5588372A
JPS5588372A JP16601778A JP16601778A JPS5588372A JP S5588372 A JPS5588372 A JP S5588372A JP 16601778 A JP16601778 A JP 16601778A JP 16601778 A JP16601778 A JP 16601778A JP S5588372 A JPS5588372 A JP S5588372A
Authority
JP
Japan
Prior art keywords
regions
base
type
gate electrodes
protecting film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16601778A
Other languages
Japanese (ja)
Other versions
JPS575060B2 (en
Inventor
Kazuo Takeda
Teruo Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP16601778A priority Critical patent/JPS5588372A/en
Publication of JPS5588372A publication Critical patent/JPS5588372A/en
Publication of JPS575060B2 publication Critical patent/JPS575060B2/ja
Granted legal-status Critical Current

Links

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent the occurrence of depletion layers and inversion layers in base regions by providing, on a protecting film above base regions between collector regions and emitter regions, gate electrodes to which higher voltage than that to the base regions is applied.
CONSTITUTION: A lateral transistor is formed of p-type collector regions 15 provided on n-type epitaxial layer base regions 12, p-type emitter regions 16, n+-type base contact regions 17, electrodes 20, 19 and 21 connected to these regions and a protecting film 23. Further, on the protecting film 23 and above the base regions 12 between the collector regions 15 and the emitter regions 16, gate electrodes 22 are provided. By connecting the gate electrodes 22 with, for example, a power source line which is on the highest potential of a semiconductor integrated circuit to make them always biased by higher potential than base potential, the occurrence of depletion layers or inversion layers on the surface can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP16601778A 1978-12-26 1978-12-26 Lateral type transistor Granted JPS5588372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16601778A JPS5588372A (en) 1978-12-26 1978-12-26 Lateral type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16601778A JPS5588372A (en) 1978-12-26 1978-12-26 Lateral type transistor

Publications (2)

Publication Number Publication Date
JPS5588372A true JPS5588372A (en) 1980-07-04
JPS575060B2 JPS575060B2 (en) 1982-01-28

Family

ID=15823360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16601778A Granted JPS5588372A (en) 1978-12-26 1978-12-26 Lateral type transistor

Country Status (1)

Country Link
JP (1) JPS5588372A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207672A (en) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Semiconductor device
JPH02192124A (en) * 1989-01-19 1990-07-27 Nec Corp Bipolar transistor
JPH0298633U (en) * 1989-01-26 1990-08-06
US5204543A (en) * 1990-03-29 1993-04-20 Fujitsu Limited Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501677A (en) * 1973-05-07 1975-01-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501677A (en) * 1973-05-07 1975-01-09

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58207672A (en) * 1982-04-23 1983-12-03 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Semiconductor device
JPH02192124A (en) * 1989-01-19 1990-07-27 Nec Corp Bipolar transistor
JPH0298633U (en) * 1989-01-26 1990-08-06
US5204543A (en) * 1990-03-29 1993-04-20 Fujitsu Limited Lateral type semiconductor device having a structure for eliminating turning-on of parasitic mos transistors formed therein

Also Published As

Publication number Publication date
JPS575060B2 (en) 1982-01-28

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