JPS5548964A - High-voltage-resisting planar semiconductor device - Google Patents

High-voltage-resisting planar semiconductor device

Info

Publication number
JPS5548964A
JPS5548964A JP12283178A JP12283178A JPS5548964A JP S5548964 A JPS5548964 A JP S5548964A JP 12283178 A JP12283178 A JP 12283178A JP 12283178 A JP12283178 A JP 12283178A JP S5548964 A JPS5548964 A JP S5548964A
Authority
JP
Japan
Prior art keywords
region
type
base
junction
diffused layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12283178A
Other languages
Japanese (ja)
Inventor
Miyao Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP12283178A priority Critical patent/JPS5548964A/en
Publication of JPS5548964A publication Critical patent/JPS5548964A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase voltage resisting property remarkably, by doping an impurity, around a diffused layer, of the conduction type same as that of the diffused layer in a planar semiconductor device having a pn junction, and making the region surrounding the diffused layer the same conduction type as the base but of low concentration. CONSTITUTION:A p<+>-type diffusion region 3 is formed in a fixed region of n-type semiconductor base 1, and pn junction 5 is formed between region 3 and base 1. The entire surface is protected with SiO2 film 2. Next, p-type impurity ions of the same conduction type as region 3 are injected in base 1 adjacent to region 3 so as to cancel n-type impurity constituting base 1. Here, shallow n<->-type or i-type region 7 is formed. Subsequently, film 2 on region 3 is removed and electrode 4 is fitted, and thereby a planar element is formed. By this, the spreading of depletion layer 6 near the end of pn junction 5 becomes larger than the inside of junction 5. Consequently, it is possible to obtain the intrinsic voltage resisting property of the planar element, and its value becomes large.
JP12283178A 1978-10-05 1978-10-05 High-voltage-resisting planar semiconductor device Pending JPS5548964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12283178A JPS5548964A (en) 1978-10-05 1978-10-05 High-voltage-resisting planar semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12283178A JPS5548964A (en) 1978-10-05 1978-10-05 High-voltage-resisting planar semiconductor device

Publications (1)

Publication Number Publication Date
JPS5548964A true JPS5548964A (en) 1980-04-08

Family

ID=14845712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12283178A Pending JPS5548964A (en) 1978-10-05 1978-10-05 High-voltage-resisting planar semiconductor device

Country Status (1)

Country Link
JP (1) JPS5548964A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151879A (en) * 1984-08-21 1986-03-14 Matsushita Electronics Corp Vertical type mos-fet
JPH03270270A (en) * 1990-03-20 1991-12-02 Fuji Electric Co Ltd Semiconductor device with pn-junction and its manufacture
JPH04132645A (en) * 1990-09-21 1992-05-06 Kenichi Kouno Production of silas wall material
EP1033756A2 (en) * 1999-03-02 2000-09-06 Hitachi, Ltd. Semiconductor device having a lightly doped layer and power converter comprising the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151879A (en) * 1984-08-21 1986-03-14 Matsushita Electronics Corp Vertical type mos-fet
JPH03270270A (en) * 1990-03-20 1991-12-02 Fuji Electric Co Ltd Semiconductor device with pn-junction and its manufacture
JPH04132645A (en) * 1990-09-21 1992-05-06 Kenichi Kouno Production of silas wall material
EP1033756A2 (en) * 1999-03-02 2000-09-06 Hitachi, Ltd. Semiconductor device having a lightly doped layer and power converter comprising the same
EP1033756A3 (en) * 1999-03-02 2003-05-21 Hitachi, Ltd. Semiconductor device having a lightly doped layer and power converter comprising the same

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