JPS567475A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS567475A
JPS567475A JP8265079A JP8265079A JPS567475A JP S567475 A JPS567475 A JP S567475A JP 8265079 A JP8265079 A JP 8265079A JP 8265079 A JP8265079 A JP 8265079A JP S567475 A JPS567475 A JP S567475A
Authority
JP
Japan
Prior art keywords
region
type
electrode
current collecting
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8265079A
Other languages
Japanese (ja)
Other versions
JPS612309B2 (en
Inventor
Tokuo Watanabe
Masami Naito
Tsutomu Yao
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8265079A priority Critical patent/JPS567475A/en
Priority to DE3024939A priority patent/DE3024939C3/en
Priority to US06/164,946 priority patent/US4388635A/en
Publication of JPS567475A publication Critical patent/JPS567475A/en
Publication of JPS612309B2 publication Critical patent/JPS612309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Abstract

PURPOSE:To obtain a semiconductor device of a large power and a high pressure- resistance having high intercepting capacity by forming a high impurity concentration region in the periphery of a cathode electode constituting a thyristor, providing an annular current collecting electrode thereon and making the potential of the current collecting electrode equal to that of the cathode electrode. CONSTITUTION:P-type impurities are diffused on both front and back surfaces of an N-type Si substrate which becomes a base region, and one is used as a P-type emitter region 1 and another is used as a P-type base region 3. Then, a plurality of N-type emitter regions 4 are provided at a predetermined interval in the region 3, and on the surface of the region 3 exposed to the central part there is fitted a control electrode 7, and on the regions 4 at both sides there are fitted cathode electrodes 6 of short emitter structure while including the exposed surface of the region 3. Furthermore, an annular current collecting electrode 8 is applied around the peripheral edge of the region through a P<+>-type region 40, and the electrodes 6 and 8 have the same potential. Thereafter, on the back surface of the region 1 there is provided an anode electrode 5 and the peripheral edge of the element has a bevel structure, which is buried by a passivation member 200.
JP8265079A 1979-07-02 1979-07-02 Semiconductor device Granted JPS567475A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8265079A JPS567475A (en) 1979-07-02 1979-07-02 Semiconductor device
DE3024939A DE3024939C3 (en) 1979-07-02 1980-07-01 Semiconductor device
US06/164,946 US4388635A (en) 1979-07-02 1980-07-01 High breakdown voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8265079A JPS567475A (en) 1979-07-02 1979-07-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS567475A true JPS567475A (en) 1981-01-26
JPS612309B2 JPS612309B2 (en) 1986-01-23

Family

ID=13780297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8265079A Granted JPS567475A (en) 1979-07-02 1979-07-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS567475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02123378U (en) * 1989-03-16 1990-10-11
US5081514A (en) * 1988-12-27 1992-01-14 Nec Corporation Protection circuit associated with input terminal of semiconductor device
US5100809A (en) * 1990-02-22 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081514A (en) * 1988-12-27 1992-01-14 Nec Corporation Protection circuit associated with input terminal of semiconductor device
JPH02123378U (en) * 1989-03-16 1990-10-11
US5100809A (en) * 1990-02-22 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS612309B2 (en) 1986-01-23

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