JPS5674963A - Horizontal-type transistor - Google Patents
Horizontal-type transistorInfo
- Publication number
- JPS5674963A JPS5674963A JP15230679A JP15230679A JPS5674963A JP S5674963 A JPS5674963 A JP S5674963A JP 15230679 A JP15230679 A JP 15230679A JP 15230679 A JP15230679 A JP 15230679A JP S5674963 A JPS5674963 A JP S5674963A
- Authority
- JP
- Japan
- Prior art keywords
- area
- type
- layer
- emitter
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a high-current amplification factor by forming an emitter area deeper than a collector area inside a base area and at the same time, providing the lower impurity concentration of a base area located between the emitter and collector areas than the impurity concentration of a base area under an emitter area. CONSTITUTION:A N type imbedded area 11 is diffused and formed on a P type silicon substrate 1 and a N type layer 3 is caused to epitaxially grow on the entire area including the area 11. Then a layer 3 is formed like an island by means of a P type insulative separation area and it is used as a base area for a horizontal-type PNP transistor. Next, inside the layer 3, an annular P type collector area 4 is diffused and formed, and in an area surrounded by the area 4, a P type emitter area 5 is provided, and is entirely covered by SiO2 film 10 with an opening provided. After these steps, electrodes 7, 9 are attached on the areas 4, 5 respectively. In addition, on the end of the layer 3, a N type area 12 for ohmic contact adjoining the area 11 is formed with an electrode 8 attached. Under this constitution, the area 5 is depened and its concentration is lessened more than that of the area 4. Further, the concentration of the area 3 between the areas 4, 5 is reduced compared with the concentration of the layer 3 right under the area 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230679A JPS5674963A (en) | 1979-11-24 | 1979-11-24 | Horizontal-type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230679A JPS5674963A (en) | 1979-11-24 | 1979-11-24 | Horizontal-type transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5674963A true JPS5674963A (en) | 1981-06-20 |
Family
ID=15537635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15230679A Pending JPS5674963A (en) | 1979-11-24 | 1979-11-24 | Horizontal-type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674963A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135965U (en) * | 1982-03-05 | 1983-09-13 | 日本電気ホームエレクトロニクス株式会社 | Lateral type transistor element |
-
1979
- 1979-11-24 JP JP15230679A patent/JPS5674963A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135965U (en) * | 1982-03-05 | 1983-09-13 | 日本電気ホームエレクトロニクス株式会社 | Lateral type transistor element |
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