JPS6482560A - Lateral bipolar transistor - Google Patents
Lateral bipolar transistorInfo
- Publication number
- JPS6482560A JPS6482560A JP24019887A JP24019887A JPS6482560A JP S6482560 A JPS6482560 A JP S6482560A JP 24019887 A JP24019887 A JP 24019887A JP 24019887 A JP24019887 A JP 24019887A JP S6482560 A JPS6482560 A JP S6482560A
- Authority
- JP
- Japan
- Prior art keywords
- region
- polysilicon layer
- bipolar transistor
- base
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain, in the self alignment manner, a lateral bipolar transistor of high precision, by keeping the electric potential of a polysilicon layer equal to a base potential when an emitter region and a collector region are formed in the self-alignment manner. CONSTITUTION:An epitaxial layer 11 is formed on a silicon substrate 10, and on the surface of this layer 11, an emitter region 4 and a collector region 5 are formed in the self-alignment manner, by the diffusion of P-type impurity using a polysilicon layer 3 formed on an oxide film 2 as a mask. On the emitter region 4, the collector region 5, a base contact region 7 and the polysilicon layer 3, the respective contact holes are made, and the respective electrodes 16, 17, 18, 19 are formed. The electrodes 19 and 18 are short-circuited. By the above constitution, the polysilicon layer 3 and a base region are always kept at the same electric potential, and a depletion layer in the base region between the emitter region 4 and the collector region 5 does not generate. Therefore excellent operation of bipolar transistor can be maintained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24019887A JPS6482560A (en) | 1987-09-24 | 1987-09-24 | Lateral bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24019887A JPS6482560A (en) | 1987-09-24 | 1987-09-24 | Lateral bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6482560A true JPS6482560A (en) | 1989-03-28 |
Family
ID=17055920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24019887A Pending JPS6482560A (en) | 1987-09-24 | 1987-09-24 | Lateral bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6482560A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5355015A (en) * | 1990-12-13 | 1994-10-11 | National Semiconductor Corporation | High breakdown lateral PNP transistor |
| US7099556B1 (en) | 1999-08-30 | 2006-08-29 | Sanyo Electric Co., Ltd. | Video recording/reproducing apparatus with tuner |
-
1987
- 1987-09-24 JP JP24019887A patent/JPS6482560A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5355015A (en) * | 1990-12-13 | 1994-10-11 | National Semiconductor Corporation | High breakdown lateral PNP transistor |
| US7099556B1 (en) | 1999-08-30 | 2006-08-29 | Sanyo Electric Co., Ltd. | Video recording/reproducing apparatus with tuner |
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