JPS5713758A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5713758A
JPS5713758A JP8740980A JP8740980A JPS5713758A JP S5713758 A JPS5713758 A JP S5713758A JP 8740980 A JP8740980 A JP 8740980A JP 8740980 A JP8740980 A JP 8740980A JP S5713758 A JPS5713758 A JP S5713758A
Authority
JP
Japan
Prior art keywords
region
collector
impurity density
withstand voltage
amplification factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8740980A
Other languages
Japanese (ja)
Inventor
Masakatsu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8740980A priority Critical patent/JPS5713758A/en
Publication of JPS5713758A publication Critical patent/JPS5713758A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To provide sufficient collector withstand voltage and current amplification factor at a semiconductor device by forming a high density region in the emitter region of a lateral transistor and setting low collector region impurity density in the vicinity of the base and collector junction. CONSTITUTION:Two P type low impurity density regions are formed as an emitter region 13 and a collector region 14 in an N type semiconductor substrate 11. The same conductive type high density diffused layer 6 is formed within the region 13, and an oxidized film 12 and a metallic electrode 15 are formed. Since the impurity density of the collector region 14 can be decreased and a depletion layer can be sufficiently extended to the inside of the collector region, the semiconductor region 11 becoming a base can be reduced in width, and the current amplification factor hFE can be increased without decreasing the collector withstand voltage.
JP8740980A 1980-06-27 1980-06-27 Semiconductor device Pending JPS5713758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8740980A JPS5713758A (en) 1980-06-27 1980-06-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8740980A JPS5713758A (en) 1980-06-27 1980-06-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5713758A true JPS5713758A (en) 1982-01-23

Family

ID=13914074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8740980A Pending JPS5713758A (en) 1980-06-27 1980-06-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5713758A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216469A (en) * 1985-03-22 1986-09-26 Nec Corp Lateral transistor
JPS6394677A (en) * 1986-10-09 1988-04-25 Pioneer Electronic Corp Manufacture of semiconductor element
JPS6394676A (en) * 1986-10-09 1988-04-25 Fujitsu Ltd Manufacture of semiconductor device
JPH01128463A (en) * 1987-11-12 1989-05-22 Sanyo Electric Co Ltd Semiconductor integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor
JPS5265679A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Semiconductor device
JPS54137283A (en) * 1978-04-17 1979-10-24 Mitsubishi Electric Corp Lateral pnp transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240077A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Process for production of lateral transistor
JPS5265679A (en) * 1975-11-27 1977-05-31 Mitsubishi Electric Corp Semiconductor device
JPS54137283A (en) * 1978-04-17 1979-10-24 Mitsubishi Electric Corp Lateral pnp transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216469A (en) * 1985-03-22 1986-09-26 Nec Corp Lateral transistor
JPS6394677A (en) * 1986-10-09 1988-04-25 Pioneer Electronic Corp Manufacture of semiconductor element
JPS6394676A (en) * 1986-10-09 1988-04-25 Fujitsu Ltd Manufacture of semiconductor device
JPH01128463A (en) * 1987-11-12 1989-05-22 Sanyo Electric Co Ltd Semiconductor integrated circuit

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