JPS56150848A - Semiconductor integrated circuit and lateral transistor - Google Patents

Semiconductor integrated circuit and lateral transistor

Info

Publication number
JPS56150848A
JPS56150848A JP5464880A JP5464880A JPS56150848A JP S56150848 A JPS56150848 A JP S56150848A JP 5464880 A JP5464880 A JP 5464880A JP 5464880 A JP5464880 A JP 5464880A JP S56150848 A JPS56150848 A JP S56150848A
Authority
JP
Japan
Prior art keywords
insulating layer
region
base region
transistor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5464880A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Tadahiro Omi
Shigeru Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP5464880A priority Critical patent/JPS56150848A/en
Publication of JPS56150848A publication Critical patent/JPS56150848A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To increase the current value and the current coveying coefficient of the subject transistor by a method wherein a region, having a suitable diffusion density is provided between a high base region and the insulating layer on the surface, is provided. CONSTITUTION:On the surface of an N<-> base region 72 directly below the insulating layer 76, an N layer 71 having the impurity density higher than that of the region 72 is provided with a suitable depth. Accordingly, a sufficient electron is deposited on the surface of Si and, as a result, the scope of energy band can be reduced. In other words, the effect of the electric charge on the insulating layer 76 is compensated in the extreme vicinity of the surface and it gives almost no effect on the flow of holes of the lateral transistor. As a result, the current value of the laterally constructed bipolar transistor, having the base region of low impurity density whereon an insulating layer is formed, is increased and the current conveying coefficient can also be increased.
JP5464880A 1980-04-23 1980-04-23 Semiconductor integrated circuit and lateral transistor Pending JPS56150848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5464880A JPS56150848A (en) 1980-04-23 1980-04-23 Semiconductor integrated circuit and lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5464880A JPS56150848A (en) 1980-04-23 1980-04-23 Semiconductor integrated circuit and lateral transistor

Publications (1)

Publication Number Publication Date
JPS56150848A true JPS56150848A (en) 1981-11-21

Family

ID=12976594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5464880A Pending JPS56150848A (en) 1980-04-23 1980-04-23 Semiconductor integrated circuit and lateral transistor

Country Status (1)

Country Link
JP (1) JPS56150848A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291171A (en) * 1986-05-30 1987-12-17 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Lateral transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149276A (en) * 1974-05-20 1975-11-29
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS51127685A (en) * 1975-04-28 1976-11-06 Mitsubishi Electric Corp Lateral-type semiconductor device
JPS5371572A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Manufacture of lateral pnp transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149276A (en) * 1974-05-20 1975-11-29
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS51127685A (en) * 1975-04-28 1976-11-06 Mitsubishi Electric Corp Lateral-type semiconductor device
JPS5371572A (en) * 1976-12-08 1978-06-26 Hitachi Ltd Manufacture of lateral pnp transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291171A (en) * 1986-05-30 1987-12-17 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Lateral transistor

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