JPS51127685A - Lateral-type semiconductor device - Google Patents

Lateral-type semiconductor device

Info

Publication number
JPS51127685A
JPS51127685A JP50051793A JP5179375A JPS51127685A JP S51127685 A JPS51127685 A JP S51127685A JP 50051793 A JP50051793 A JP 50051793A JP 5179375 A JP5179375 A JP 5179375A JP S51127685 A JPS51127685 A JP S51127685A
Authority
JP
Japan
Prior art keywords
lateral
semiconductor device
type semiconductor
insulator film
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50051793A
Other languages
Japanese (ja)
Other versions
JPS5742227B2 (en
Inventor
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50051793A priority Critical patent/JPS51127685A/en
Publication of JPS51127685A publication Critical patent/JPS51127685A/en
Publication of JPS5742227B2 publication Critical patent/JPS5742227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Abstract

PURPOSE:To increase the sensitivity of the lateral-type semiconductor device. This is made possible by forming a high density emitter zone which is positioned near the substrate surface and is adjoying the emitter zone, and also by adding a low density impurity near the insulator film of the base zone in such a way as to negate the interfacial caused by the insulator film.
JP50051793A 1975-04-28 1975-04-28 Lateral-type semiconductor device Granted JPS51127685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50051793A JPS51127685A (en) 1975-04-28 1975-04-28 Lateral-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50051793A JPS51127685A (en) 1975-04-28 1975-04-28 Lateral-type semiconductor device

Publications (2)

Publication Number Publication Date
JPS51127685A true JPS51127685A (en) 1976-11-06
JPS5742227B2 JPS5742227B2 (en) 1982-09-07

Family

ID=12896807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50051793A Granted JPS51127685A (en) 1975-04-28 1975-04-28 Lateral-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS51127685A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150848A (en) * 1980-04-23 1981-11-21 Semiconductor Res Found Semiconductor integrated circuit and lateral transistor
JPH01268170A (en) * 1988-04-20 1989-10-25 Fujitsu Ltd Planar type thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384430U (en) * 1986-11-20 1988-06-02

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150848A (en) * 1980-04-23 1981-11-21 Semiconductor Res Found Semiconductor integrated circuit and lateral transistor
JPH01268170A (en) * 1988-04-20 1989-10-25 Fujitsu Ltd Planar type thyristor

Also Published As

Publication number Publication date
JPS5742227B2 (en) 1982-09-07

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees