JPS5214388A - Process for complementary insulated gate semiconductor integrated circuit device - Google Patents

Process for complementary insulated gate semiconductor integrated circuit device

Info

Publication number
JPS5214388A
JPS5214388A JP50090291A JP9029175A JPS5214388A JP S5214388 A JPS5214388 A JP S5214388A JP 50090291 A JP50090291 A JP 50090291A JP 9029175 A JP9029175 A JP 9029175A JP S5214388 A JPS5214388 A JP S5214388A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
insulated gate
gate semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50090291A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Takashi Azuma
Hideki Fukuda
Yasutake Kuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50090291A priority Critical patent/JPS5214388A/en
Publication of JPS5214388A publication Critical patent/JPS5214388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Abstract

PURPOSE:To make the density of integration higher and to avoid apperance of parasitic MOS by varying the concentration distribution of well region with a layer of epitaxial growth.
JP50090291A 1975-07-25 1975-07-25 Process for complementary insulated gate semiconductor integrated circuit device Pending JPS5214388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50090291A JPS5214388A (en) 1975-07-25 1975-07-25 Process for complementary insulated gate semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50090291A JPS5214388A (en) 1975-07-25 1975-07-25 Process for complementary insulated gate semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5214388A true JPS5214388A (en) 1977-02-03

Family

ID=13994416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50090291A Pending JPS5214388A (en) 1975-07-25 1975-07-25 Process for complementary insulated gate semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5214388A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58199537A (en) * 1982-05-14 1983-11-19 Matsushita Electric Ind Co Ltd Manufacture of high resistance semiconductor layer
JPS6037760A (en) * 1983-07-05 1985-02-27 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Method of producing semiconductor device
JPS60124964A (en) * 1983-12-12 1985-07-04 Fujitsu Ltd Manufacture of semiconductor device
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58199537A (en) * 1982-05-14 1983-11-19 Matsushita Electric Ind Co Ltd Manufacture of high resistance semiconductor layer
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length
JPS6037760A (en) * 1983-07-05 1985-02-27 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Method of producing semiconductor device
JPH0412628B2 (en) * 1983-07-05 1992-03-05 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS60124964A (en) * 1983-12-12 1985-07-04 Fujitsu Ltd Manufacture of semiconductor device

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