JPS57206063A - Semiconductor substrate and manufacture therefor - Google Patents

Semiconductor substrate and manufacture therefor

Info

Publication number
JPS57206063A
JPS57206063A JP56090936A JP9093681A JPS57206063A JP S57206063 A JPS57206063 A JP S57206063A JP 56090936 A JP56090936 A JP 56090936A JP 9093681 A JP9093681 A JP 9093681A JP S57206063 A JPS57206063 A JP S57206063A
Authority
JP
Japan
Prior art keywords
type
formation
region
layer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56090936A
Other languages
Japanese (ja)
Inventor
Hiroshi Iwasaki
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56090936A priority Critical patent/JPS57206063A/en
Priority to EP82302987A priority patent/EP0067661A1/en
Publication of JPS57206063A publication Critical patent/JPS57206063A/en
Priority to DE8419430U priority patent/DE8419430U1/en
Priority claimed from DE8419430U external-priority patent/DE8419430U1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To build a P and N islands separated from each other by a method wherein an opposite condutivity type layer is buried in a semicondcutor substrate and a semiconductor region of the same conductivity type is formed therein for the formation of a diffused region reaching the buried layer from the semiconcutor region primary surface. CONSTITUTION:An N type impurity is diffused into a P type substrate 3-1 of 10<14>-10<17>cm<-3> concentration with a patterned heat oxidized film 3-2 acting as a mask for the formation of a buried layer 3-3 with a sheet resistance of 3- 20OMEGA/mm.<2>. After the removal of the film 3-2, on the whole substrate surface a P type epitaxial layers 3-4 are grown with an impurity concentration 10<14>- 10<16>cm<-3>. P ions are implanted into the epitaxial layer 3-4 for the formation of a diffusion source 3-7. P is thermally diffused in an inert atmosphere for the formation of an N type well region 3-5 adjoining the buried layer 3-3. A P channel MOS is formed in the N type well region 3-5 and an N channel MOS in the P type epitaxial layers 3-4.
JP56090936A 1981-06-15 1981-06-15 Semiconductor substrate and manufacture therefor Pending JPS57206063A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56090936A JPS57206063A (en) 1981-06-15 1981-06-15 Semiconductor substrate and manufacture therefor
EP82302987A EP0067661A1 (en) 1981-06-15 1982-06-09 Semiconductor device and method for manufacturing the same
DE8419430U DE8419430U1 (en) 1981-06-15 1984-06-28 Snap hinge made of plastic

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56090936A JPS57206063A (en) 1981-06-15 1981-06-15 Semiconductor substrate and manufacture therefor
DE8419430U DE8419430U1 (en) 1981-06-15 1984-06-28 Snap hinge made of plastic

Publications (1)

Publication Number Publication Date
JPS57206063A true JPS57206063A (en) 1982-12-17

Family

ID=25949967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090936A Pending JPS57206063A (en) 1981-06-15 1981-06-15 Semiconductor substrate and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS57206063A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220453A (en) * 1985-03-23 1986-09-30 エステイーシー　ピーエルシー Integrated circuit and manufacture thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214388A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Process for complementary insulated gate semiconductor integrated circuit device
JPS5239380A (en) * 1975-09-25 1977-03-26 Mitsubishi Electric Corp Semiconductor device
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS56169359A (en) * 1980-05-30 1981-12-26 Ricoh Co Ltd Semiconductor integrated circuit device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5214388A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Process for complementary insulated gate semiconductor integrated circuit device
JPS5239380A (en) * 1975-09-25 1977-03-26 Mitsubishi Electric Corp Semiconductor device
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
JPS56169359A (en) * 1980-05-30 1981-12-26 Ricoh Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220453A (en) * 1985-03-23 1986-09-30 エステイーシー　ピーエルシー Integrated circuit and manufacture thereof

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