JPS55130141A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55130141A
JPS55130141A JP3789179A JP3789179A JPS55130141A JP S55130141 A JPS55130141 A JP S55130141A JP 3789179 A JP3789179 A JP 3789179A JP 3789179 A JP3789179 A JP 3789179A JP S55130141 A JPS55130141 A JP S55130141A
Authority
JP
Japan
Prior art keywords
layer
impurity
silicon
protective film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3789179A
Other languages
Japanese (ja)
Other versions
JPS6138859B2 (en
Inventor
Toshio Hashimoto
Tsuguo Inada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3789179A priority Critical patent/JPS55130141A/en
Publication of JPS55130141A publication Critical patent/JPS55130141A/en
Publication of JPS6138859B2 publication Critical patent/JPS6138859B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To connect a metal wiring layer to an active impurity layer without step in a semiconductor device by forming an electrode connecting portion of the layer formed on a semiconductor substrate onto a surface protective film of the substrate made of high specific resistance polycrystalline silicon. CONSTITUTION:A polycrystalline silicon layer 9 having high specific resistance containing no impurity in thickness of approx. 5,000Angstrom is accumulated as a protective film on the surface of a p-type silicon substrate 3 formed with an n<+>-type silicon layer 1 by means of a monosilane thermal decomposition. P<+>ion 10 is implanted on the entire surface of the layer 9 to form an n-type impurity addition layer 11 of 2,000-3,000Angstrom thereon. Thereafter, a laser light throttled in fine width is irradiated to an electrode forming portion 12 of the layer 9 to locally heat the portion 12, and a conductive layer made of silicon recrystallized layer containing P is formed on the portion 12.
JP3789179A 1979-03-30 1979-03-30 Fabricating method of semiconductor device Granted JPS55130141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3789179A JPS55130141A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3789179A JPS55130141A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55130141A true JPS55130141A (en) 1980-10-08
JPS6138859B2 JPS6138859B2 (en) 1986-09-01

Family

ID=12510153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3789179A Granted JPS55130141A (en) 1979-03-30 1979-03-30 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55130141A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793524A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPH0294519A (en) * 1988-09-30 1990-04-05 Sony Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793524A (en) * 1980-12-03 1982-06-10 Fujitsu Ltd Manufacture of semiconductor device
JPS6328336B2 (en) * 1980-12-03 1988-06-08 Fujitsu Ltd
JPH0294519A (en) * 1988-09-30 1990-04-05 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6138859B2 (en) 1986-09-01

Similar Documents

Publication Publication Date Title
JPH0520914B2 (en)
JPS55128869A (en) Semiconductor device and method of fabricating the same
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
JPS55130141A (en) Fabricating method of semiconductor device
JPS5470776A (en) Semiconductor device and its manufacture
JPS5649554A (en) Manufacture of semiconductor memory
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS54139490A (en) Semiconductor memory unit
JPS54149465A (en) Production of semiconductor device
JPS5541738A (en) Preparation of semiconductor device
JPS56146231A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS6484673A (en) Manufacture of semiconductor optical detection element
JPS5534470A (en) Production for solar battery
JPS5463689A (en) Production of semiconductor substrate for solar battery
JPS6422026A (en) Manufacture of semiconductor device
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS5780768A (en) Semiconductor device
JPS6468976A (en) Manufacture of semiconductor radiation detector
JPS5685858A (en) Semiconductor device
JPS55128881A (en) Method of fabricating semiconductor device
JPS55163861A (en) Semiconductor device and manufacturing thereof
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5678139A (en) Manufacture of semiconductor integrated circuit
JPS57206063A (en) Semiconductor substrate and manufacture therefor