JPS55130141A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS55130141A JPS55130141A JP3789179A JP3789179A JPS55130141A JP S55130141 A JPS55130141 A JP S55130141A JP 3789179 A JP3789179 A JP 3789179A JP 3789179 A JP3789179 A JP 3789179A JP S55130141 A JPS55130141 A JP S55130141A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- silicon
- protective film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To connect a metal wiring layer to an active impurity layer without step in a semiconductor device by forming an electrode connecting portion of the layer formed on a semiconductor substrate onto a surface protective film of the substrate made of high specific resistance polycrystalline silicon. CONSTITUTION:A polycrystalline silicon layer 9 having high specific resistance containing no impurity in thickness of approx. 5,000Angstrom is accumulated as a protective film on the surface of a p-type silicon substrate 3 formed with an n<+>-type silicon layer 1 by means of a monosilane thermal decomposition. P<+>ion 10 is implanted on the entire surface of the layer 9 to form an n-type impurity addition layer 11 of 2,000-3,000Angstrom thereon. Thereafter, a laser light throttled in fine width is irradiated to an electrode forming portion 12 of the layer 9 to locally heat the portion 12, and a conductive layer made of silicon recrystallized layer containing P is formed on the portion 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3789179A JPS55130141A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3789179A JPS55130141A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55130141A true JPS55130141A (en) | 1980-10-08 |
JPS6138859B2 JPS6138859B2 (en) | 1986-09-01 |
Family
ID=12510153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3789179A Granted JPS55130141A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130141A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793524A (en) * | 1980-12-03 | 1982-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0294519A (en) * | 1988-09-30 | 1990-04-05 | Sony Corp | Manufacture of semiconductor device |
-
1979
- 1979-03-30 JP JP3789179A patent/JPS55130141A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5793524A (en) * | 1980-12-03 | 1982-06-10 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6328336B2 (en) * | 1980-12-03 | 1988-06-08 | Fujitsu Ltd | |
JPH0294519A (en) * | 1988-09-30 | 1990-04-05 | Sony Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6138859B2 (en) | 1986-09-01 |
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