JPS5780768A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5780768A
JPS5780768A JP15655880A JP15655880A JPS5780768A JP S5780768 A JPS5780768 A JP S5780768A JP 15655880 A JP15655880 A JP 15655880A JP 15655880 A JP15655880 A JP 15655880A JP S5780768 A JPS5780768 A JP S5780768A
Authority
JP
Japan
Prior art keywords
layer
substrate
region
polycrystalline
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15655880A
Other languages
Japanese (ja)
Other versions
JPS5951128B2 (en
Inventor
Nobuo Toyokura
Shinichi Inoue
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55156558A priority Critical patent/JPS5951128B2/en
Priority to IE259181A priority patent/IE52791B1/en
Priority to DE8181305257T priority patent/DE3173835D1/en
Priority to EP19810305257 priority patent/EP0051500B1/en
Publication of JPS5780768A publication Critical patent/JPS5780768A/en
Publication of JPS5951128B2 publication Critical patent/JPS5951128B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a diffused region of the prescribed diffusion depth in a semiconductor device by composing an electrode of a polycrystalline or amorphous semiconductor layer and a metallic silicide contaiing effective impurity for a semiconductor substrate aranged on the layer.
CONSTITUTION: A hole of a field insulating film 12 formed on the surface of a semiconductor substrate 11 is formed. Then, a polycrystalline or amorphous Si layer 14 is covered on the substrate 11. Then, an Mo silicide layer 15 containing phosphorus is covered on the layer 14. Thereafter, 2-layer structure of the layers 15, 14 is patterned in desired shape. Subsequently, the substrate 11 is heat treated to impregnate the phosphorus in the layer 15 into the layer 14 to diffuse it into the substrate 11, thereby forming an N+ type region 13. At this time an oxidized film 16 is formed on the exposed surface of the layers 15 and 14. With this configuration, since the diffusion depth of the region 13 can be maintained constantly, a stable withstand voltage charateristic with less irregularity can be obtained.
COPYRIGHT: (C)1982,JPO&Japio
JP55156558A 1980-11-05 1980-11-07 semiconductor equipment Expired JPS5951128B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55156558A JPS5951128B2 (en) 1980-11-07 1980-11-07 semiconductor equipment
IE259181A IE52791B1 (en) 1980-11-05 1981-11-04 Semiconductor devices
DE8181305257T DE3173835D1 (en) 1980-11-05 1981-11-05 Semiconductor devices
EP19810305257 EP0051500B1 (en) 1980-11-05 1981-11-05 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156558A JPS5951128B2 (en) 1980-11-07 1980-11-07 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5780768A true JPS5780768A (en) 1982-05-20
JPS5951128B2 JPS5951128B2 (en) 1984-12-12

Family

ID=15630414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156558A Expired JPS5951128B2 (en) 1980-11-05 1980-11-07 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5951128B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113619A (en) * 1982-12-20 1984-06-30 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59202669A (en) * 1983-05-02 1984-11-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6149465A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118651A (en) * 1979-03-01 1980-09-11 Ibm Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118651A (en) * 1979-03-01 1980-09-11 Ibm Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59113619A (en) * 1982-12-20 1984-06-30 Matsushita Electronics Corp Manufacture of semiconductor device
JPS59202669A (en) * 1983-05-02 1984-11-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6149465A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Solid-state image pickup device

Also Published As

Publication number Publication date
JPS5951128B2 (en) 1984-12-12

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