JPS5780768A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5780768A JPS5780768A JP15655880A JP15655880A JPS5780768A JP S5780768 A JPS5780768 A JP S5780768A JP 15655880 A JP15655880 A JP 15655880A JP 15655880 A JP15655880 A JP 15655880A JP S5780768 A JPS5780768 A JP S5780768A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- region
- polycrystalline
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a diffused region of the prescribed diffusion depth in a semiconductor device by composing an electrode of a polycrystalline or amorphous semiconductor layer and a metallic silicide contaiing effective impurity for a semiconductor substrate aranged on the layer.
CONSTITUTION: A hole of a field insulating film 12 formed on the surface of a semiconductor substrate 11 is formed. Then, a polycrystalline or amorphous Si layer 14 is covered on the substrate 11. Then, an Mo silicide layer 15 containing phosphorus is covered on the layer 14. Thereafter, 2-layer structure of the layers 15, 14 is patterned in desired shape. Subsequently, the substrate 11 is heat treated to impregnate the phosphorus in the layer 15 into the layer 14 to diffuse it into the substrate 11, thereby forming an N+ type region 13. At this time an oxidized film 16 is formed on the exposed surface of the layers 15 and 14. With this configuration, since the diffusion depth of the region 13 can be maintained constantly, a stable withstand voltage charateristic with less irregularity can be obtained.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55156558A JPS5951128B2 (en) | 1980-11-07 | 1980-11-07 | semiconductor equipment |
IE259181A IE52791B1 (en) | 1980-11-05 | 1981-11-04 | Semiconductor devices |
DE8181305257T DE3173835D1 (en) | 1980-11-05 | 1981-11-05 | Semiconductor devices |
EP19810305257 EP0051500B1 (en) | 1980-11-05 | 1981-11-05 | Semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55156558A JPS5951128B2 (en) | 1980-11-07 | 1980-11-07 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5780768A true JPS5780768A (en) | 1982-05-20 |
JPS5951128B2 JPS5951128B2 (en) | 1984-12-12 |
Family
ID=15630414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55156558A Expired JPS5951128B2 (en) | 1980-11-05 | 1980-11-07 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5951128B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59113619A (en) * | 1982-12-20 | 1984-06-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59202669A (en) * | 1983-05-02 | 1984-11-16 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS6149465A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Solid-state image pickup device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55118651A (en) * | 1979-03-01 | 1980-09-11 | Ibm | Semiconductor device |
-
1980
- 1980-11-07 JP JP55156558A patent/JPS5951128B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55118651A (en) * | 1979-03-01 | 1980-09-11 | Ibm | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59113619A (en) * | 1982-12-20 | 1984-06-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59202669A (en) * | 1983-05-02 | 1984-11-16 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS6149465A (en) * | 1984-08-17 | 1986-03-11 | Matsushita Electronics Corp | Solid-state image pickup device |
Also Published As
Publication number | Publication date |
---|---|
JPS5951128B2 (en) | 1984-12-12 |
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