JPS54122092A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS54122092A JPS54122092A JP2930078A JP2930078A JPS54122092A JP S54122092 A JPS54122092 A JP S54122092A JP 2930078 A JP2930078 A JP 2930078A JP 2930078 A JP2930078 A JP 2930078A JP S54122092 A JPS54122092 A JP S54122092A
- Authority
- JP
- Japan
- Prior art keywords
- arsenic
- diffusion
- approximate
- slow
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To make a junction shallow and sheet resistance low by carrying out shallow deposition with low density through ion implantation using as diffusion impurities arsenic whose diffusion coefficient is one-figure slow than that of phosphorus.
CONSTITUTION: Arsenic slow in diffusion coefficient is ion-implanted by energy of approximate 100 to 150KeV to the dope amount of 1 × 1016/cm2, thereby forming a N+ layer. Next, non-dope SiO2 11 is grown by CVD to a thickness of approximate 1000Å in order to attain masking for the prevention of the out-diffusion of arsenic due to annealing in the next process, and also to prevent phosphorus from diffusing directly to the silicon substrate from PSG to be deposited next.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2930078A JPS54122092A (en) | 1978-03-16 | 1978-03-16 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2930078A JPS54122092A (en) | 1978-03-16 | 1978-03-16 | Manufacture of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54122092A true JPS54122092A (en) | 1979-09-21 |
Family
ID=12272376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2930078A Pending JPS54122092A (en) | 1978-03-16 | 1978-03-16 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54122092A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797678A (en) * | 1980-12-10 | 1982-06-17 | Ibm | Method of producing insulated gate type field effect transistor |
JPS61154149A (en) * | 1984-12-27 | 1986-07-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51148378A (en) * | 1975-06-14 | 1976-12-20 | Fujitsu Ltd | Manufacturing method of insulation gate type electric field effect tra nsistor |
-
1978
- 1978-03-16 JP JP2930078A patent/JPS54122092A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51148378A (en) * | 1975-06-14 | 1976-12-20 | Fujitsu Ltd | Manufacturing method of insulation gate type electric field effect tra nsistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797678A (en) * | 1980-12-10 | 1982-06-17 | Ibm | Method of producing insulated gate type field effect transistor |
JPS61154149A (en) * | 1984-12-27 | 1986-07-12 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
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