JPS54122092A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS54122092A
JPS54122092A JP2930078A JP2930078A JPS54122092A JP S54122092 A JPS54122092 A JP S54122092A JP 2930078 A JP2930078 A JP 2930078A JP 2930078 A JP2930078 A JP 2930078A JP S54122092 A JPS54122092 A JP S54122092A
Authority
JP
Japan
Prior art keywords
arsenic
diffusion
approximate
slow
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2930078A
Other languages
Japanese (ja)
Inventor
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2930078A priority Critical patent/JPS54122092A/en
Publication of JPS54122092A publication Critical patent/JPS54122092A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To make a junction shallow and sheet resistance low by carrying out shallow deposition with low density through ion implantation using as diffusion impurities arsenic whose diffusion coefficient is one-figure slow than that of phosphorus.
CONSTITUTION: Arsenic slow in diffusion coefficient is ion-implanted by energy of approximate 100 to 150KeV to the dope amount of 1 × 1016/cm2, thereby forming a N+ layer. Next, non-dope SiO2 11 is grown by CVD to a thickness of approximate 1000Å in order to attain masking for the prevention of the out-diffusion of arsenic due to annealing in the next process, and also to prevent phosphorus from diffusing directly to the silicon substrate from PSG to be deposited next.
COPYRIGHT: (C)1979,JPO&Japio
JP2930078A 1978-03-16 1978-03-16 Manufacture of semiconductor integrated circuit Pending JPS54122092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2930078A JPS54122092A (en) 1978-03-16 1978-03-16 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2930078A JPS54122092A (en) 1978-03-16 1978-03-16 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS54122092A true JPS54122092A (en) 1979-09-21

Family

ID=12272376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2930078A Pending JPS54122092A (en) 1978-03-16 1978-03-16 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS54122092A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797678A (en) * 1980-12-10 1982-06-17 Ibm Method of producing insulated gate type field effect transistor
JPS61154149A (en) * 1984-12-27 1986-07-12 Fujitsu Ltd Semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148378A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of insulation gate type electric field effect tra nsistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148378A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of insulation gate type electric field effect tra nsistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797678A (en) * 1980-12-10 1982-06-17 Ibm Method of producing insulated gate type field effect transistor
JPS61154149A (en) * 1984-12-27 1986-07-12 Fujitsu Ltd Semiconductor device and manufacture thereof

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