JPS54142982A - Field effect semiconductor device of junction type and its manufacture - Google Patents
Field effect semiconductor device of junction type and its manufactureInfo
- Publication number
- JPS54142982A JPS54142982A JP5157478A JP5157478A JPS54142982A JP S54142982 A JPS54142982 A JP S54142982A JP 5157478 A JP5157478 A JP 5157478A JP 5157478 A JP5157478 A JP 5157478A JP S54142982 A JPS54142982 A JP S54142982A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- impurities
- gate
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain an extremely-small gate by providing a polycrystalline Si layer with impurities to the gate formation region of a semiconductor substrate and by forming a gate region by diffusing impurities in the polycrystalline layer at the same time as the diffusing formation of source and drain regions.
CONSTITUTION: In P-type Si substrate 1, N-type well region 2 is formed by diffusion, pattern 134 made of SiO2 film 3 and conductive film 4 of Mo, W and polycrystalline Si is provided at its center surface, and Si3N4 film 5 is bonded from one part of this surface to the drain formation region. On the entire surface, polycrysalline Si layer 6 with P-type impurities is deposited and then removed by reactive sputtering etching except parts 6-1 and 6-2 only on the flank of lamination film 134. On the other hand, either part 6-2 and film 5 are removed by etching, N+-type source and drain regions 7 and 8 are formed by diffusion at both the side bordering on film 134, and impurities are diffused from part 6-1 at the same time to form P-type gate region 9. Next, the entier surface is convered with SiO2 film 10 and openings are made, where respective electrodes are fitted.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5157478A JPS54142982A (en) | 1978-04-27 | 1978-04-27 | Field effect semiconductor device of junction type and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5157478A JPS54142982A (en) | 1978-04-27 | 1978-04-27 | Field effect semiconductor device of junction type and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54142982A true JPS54142982A (en) | 1979-11-07 |
Family
ID=12890715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5157478A Pending JPS54142982A (en) | 1978-04-27 | 1978-04-27 | Field effect semiconductor device of junction type and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54142982A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124172A (en) * | 1982-12-30 | 1984-07-18 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Conductor structure |
| US4532532A (en) * | 1982-12-30 | 1985-07-30 | International Business Machines Corporation | Submicron conductor manufacturing |
-
1978
- 1978-04-27 JP JP5157478A patent/JPS54142982A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124172A (en) * | 1982-12-30 | 1984-07-18 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Conductor structure |
| US4532532A (en) * | 1982-12-30 | 1985-07-30 | International Business Machines Corporation | Submicron conductor manufacturing |
| JPS6355224B2 (en) * | 1982-12-30 | 1988-11-01 | Intaanashonaru Bijinesu Mashiinzu Corp |
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