JPS5553461A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5553461A JPS5553461A JP12708078A JP12708078A JPS5553461A JP S5553461 A JPS5553461 A JP S5553461A JP 12708078 A JP12708078 A JP 12708078A JP 12708078 A JP12708078 A JP 12708078A JP S5553461 A JPS5553461 A JP S5553461A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- selfmatching
- sio
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve integration ability of MOS device by forming ource-drain in poly Si layer by selfmatching in utilizing that diffusion factor is larger in poly Si than monocrystal and layer oxide grows by impurity density in oxidation at lower temperature.
CONSTITUTION: SiO212, selectively formed by gas phase epi multi-crystal layers 13, 13' and monocrystal layer 14 are formed on P-type Si 11 by selfmatching. Upperside of the layer 14 is coated with SiO28 and As is diffused into the layers 13, 13' so that As penerate from the border with layer 14 to form the layers 15, 15'. The film 8 is removed and oxidied at lower temperature and then SiO2 layer 19 grows by selfmatching on the layer 14 thinly and on the layers 13, 13', 15, 15' thickly. The layer 19 is slightly etched to expose the layer 14 and a gate film oxide is formed and B ion is injected into the layer 14 to control the potential value. Finally poly Si gate electrode 17 is formed. The electrode 17 may be stacked on source-drain electric conductive layers 13, 13'.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12708078A JPS5553461A (en) | 1978-10-16 | 1978-10-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12708078A JPS5553461A (en) | 1978-10-16 | 1978-10-16 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5553461A true JPS5553461A (en) | 1980-04-18 |
Family
ID=14951069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12708078A Pending JPS5553461A (en) | 1978-10-16 | 1978-10-16 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553461A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4743843A (en) * | 1984-08-31 | 1988-05-10 | Mitsubishi Denki Kabushiki Kaisha | Display signal generator device |
US5043778A (en) * | 1986-08-11 | 1991-08-27 | Texas Instruments Incorporated | Oxide-isolated source/drain transistor |
US5146291A (en) * | 1988-08-31 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | MIS device having lightly doped drain structure |
US5217913A (en) * | 1988-08-31 | 1993-06-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers |
US5506435A (en) * | 1992-06-20 | 1996-04-09 | Sony Corporation | Static ram having an active area with a tapered bottom surface |
-
1978
- 1978-10-16 JP JP12708078A patent/JPS5553461A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4743843A (en) * | 1984-08-31 | 1988-05-10 | Mitsubishi Denki Kabushiki Kaisha | Display signal generator device |
US5043778A (en) * | 1986-08-11 | 1991-08-27 | Texas Instruments Incorporated | Oxide-isolated source/drain transistor |
US5146291A (en) * | 1988-08-31 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | MIS device having lightly doped drain structure |
US5217913A (en) * | 1988-08-31 | 1993-06-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers |
US5506435A (en) * | 1992-06-20 | 1996-04-09 | Sony Corporation | Static ram having an active area with a tapered bottom surface |
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