JPS55113324A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55113324A
JPS55113324A JP1976979A JP1976979A JPS55113324A JP S55113324 A JPS55113324 A JP S55113324A JP 1976979 A JP1976979 A JP 1976979A JP 1976979 A JP1976979 A JP 1976979A JP S55113324 A JPS55113324 A JP S55113324A
Authority
JP
Japan
Prior art keywords
layer
poly
oxide film
substrate
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1976979A
Other languages
Japanese (ja)
Other versions
JPS648471B2 (en
Inventor
Jun Murata
Kuniki Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1976979A priority Critical patent/JPS55113324A/en
Publication of JPS55113324A publication Critical patent/JPS55113324A/en
Publication of JPS648471B2 publication Critical patent/JPS648471B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To prevent the lowering of threshold voltage due to the addition of P by forming a poly-Si layer in such a way that its concentration decreases from the inner side toward the surface, in a two-layered semiconductor device.
CONSTITUTION: P-added poly-Si layer 4 and no-additive poly-Si layer 4' are formed on field oxide film 2 and gate oxide film 3 provided on p-type Si substrate 1. By photo-etching, a part of substrate 1 is exposed and operating oxidization, thick inter- layer oxide film 6 is formed in layer 4 and gate oxide film 5 is formed on the substrate surface. Next, poly-Si layer 7 is formed and a part of substrate 1 is selectively exposed again, and by diffusing As, n+ layer 8 is formed. Since a no-additive poly-Si layer is provided in a p-added poly-Si layer in this way, the addition of P from the surface of the poly-Si layer is greatly reduced at the time of oxidization and the formation of an n-type substance immediately below the gate oxide film is small. Consequently, the lowering of the threshold voltage can be prevented and manufacturing yields can be increased.
COPYRIGHT: (C)1980,JPO&Japio
JP1976979A 1979-02-23 1979-02-23 Manufacture of semiconductor device Granted JPS55113324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1976979A JPS55113324A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1976979A JPS55113324A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55113324A true JPS55113324A (en) 1980-09-01
JPS648471B2 JPS648471B2 (en) 1989-02-14

Family

ID=12008532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1976979A Granted JPS55113324A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55113324A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100451A (en) * 1981-12-10 1983-06-15 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61198664A (en) * 1985-02-27 1986-09-03 Sharp Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915373A (en) * 1972-05-18 1974-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915373A (en) * 1972-05-18 1974-02-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100451A (en) * 1981-12-10 1983-06-15 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS61198664A (en) * 1985-02-27 1986-09-03 Sharp Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS648471B2 (en) 1989-02-14

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