JPS55113324A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55113324A JPS55113324A JP1976979A JP1976979A JPS55113324A JP S55113324 A JPS55113324 A JP S55113324A JP 1976979 A JP1976979 A JP 1976979A JP 1976979 A JP1976979 A JP 1976979A JP S55113324 A JPS55113324 A JP S55113324A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- oxide film
- substrate
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To prevent the lowering of threshold voltage due to the addition of P by forming a poly-Si layer in such a way that its concentration decreases from the inner side toward the surface, in a two-layered semiconductor device.
CONSTITUTION: P-added poly-Si layer 4 and no-additive poly-Si layer 4' are formed on field oxide film 2 and gate oxide film 3 provided on p-type Si substrate 1. By photo-etching, a part of substrate 1 is exposed and operating oxidization, thick inter- layer oxide film 6 is formed in layer 4 and gate oxide film 5 is formed on the substrate surface. Next, poly-Si layer 7 is formed and a part of substrate 1 is selectively exposed again, and by diffusing As, n+ layer 8 is formed. Since a no-additive poly-Si layer is provided in a p-added poly-Si layer in this way, the addition of P from the surface of the poly-Si layer is greatly reduced at the time of oxidization and the formation of an n-type substance immediately below the gate oxide film is small. Consequently, the lowering of the threshold voltage can be prevented and manufacturing yields can be increased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976979A JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1976979A JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55113324A true JPS55113324A (en) | 1980-09-01 |
JPS648471B2 JPS648471B2 (en) | 1989-02-14 |
Family
ID=12008532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1976979A Granted JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113324A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100451A (en) * | 1981-12-10 | 1983-06-15 | Oki Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS61198664A (en) * | 1985-02-27 | 1986-09-03 | Sharp Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915373A (en) * | 1972-05-18 | 1974-02-09 |
-
1979
- 1979-02-23 JP JP1976979A patent/JPS55113324A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4915373A (en) * | 1972-05-18 | 1974-02-09 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100451A (en) * | 1981-12-10 | 1983-06-15 | Oki Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS61198664A (en) * | 1985-02-27 | 1986-09-03 | Sharp Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS648471B2 (en) | 1989-02-14 |
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