JPS5286086A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5286086A
JPS5286086A JP207976A JP207976A JPS5286086A JP S5286086 A JPS5286086 A JP S5286086A JP 207976 A JP207976 A JP 207976A JP 207976 A JP207976 A JP 207976A JP S5286086 A JPS5286086 A JP S5286086A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
drain
gate electrode
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP207976A
Other languages
Japanese (ja)
Inventor
Hiroo Masuda
Ken Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP207976A priority Critical patent/JPS5286086A/en
Publication of JPS5286086A publication Critical patent/JPS5286086A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the safety voltage of drain by being to lower than 1018/cm3 the surface impurity density of drain diffusion layer of overlapping part to the gate electrode on the MISFET formed on the semiconductive substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP207976A 1976-01-12 1976-01-12 Field effect transistor Pending JPS5286086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP207976A JPS5286086A (en) 1976-01-12 1976-01-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP207976A JPS5286086A (en) 1976-01-12 1976-01-12 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5286086A true JPS5286086A (en) 1977-07-16

Family

ID=11519329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP207976A Pending JPS5286086A (en) 1976-01-12 1976-01-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5286086A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091674A (en) * 1983-10-26 1985-05-23 Hitachi Ltd Insulating gate type field-effect transistor
JPS60128656A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor device
JPS6114765A (en) * 1984-06-29 1986-01-22 Shindengen Electric Mfg Co Ltd Insulated gate field effect transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091674A (en) * 1983-10-26 1985-05-23 Hitachi Ltd Insulating gate type field-effect transistor
JPS60128656A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor device
JPS6114765A (en) * 1984-06-29 1986-01-22 Shindengen Electric Mfg Co Ltd Insulated gate field effect transistor

Similar Documents

Publication Publication Date Title
JPS5279679A (en) Semiconductor memory device
JPS5222480A (en) Insulating gate field effect transistor
JPS5366181A (en) High dielectric strength mis type transistor
JPS5226177A (en) Semi-conductor unit
JPS5382179A (en) Field effect transistor
JPS5286086A (en) Field effect transistor
JPS5331979A (en) Insulated gate type field effect semiconductor device
JPS5366179A (en) Semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS533074A (en) Production of schottkey barrier gate field effect transistor
JPS52100878A (en) Field effect transistor
JPS5350985A (en) Semiconductor memory device
JPS52136583A (en) Mos type semiconductor device
JPS5371573A (en) Field effect transistor of isolating gate type
JPS538080A (en) Insulated gate type field effect transistor
JPS5364480A (en) Field effect semiconductor device
JPS5367373A (en) Semiconductor device
JPS5363987A (en) Junction type field effect transistor
JPS52146186A (en) Semiconductor device
JPS5376770A (en) Production of insulated gate field effect transistor
JPS52144980A (en) Sos semiconductor device
JPS52127078A (en) Semiconductor device
JPS5373980A (en) Semiconductor device and its manufacture
JPS5214380A (en) Method for production of silicon gate mos transistor