JPS5286086A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5286086A JPS5286086A JP207976A JP207976A JPS5286086A JP S5286086 A JPS5286086 A JP S5286086A JP 207976 A JP207976 A JP 207976A JP 207976 A JP207976 A JP 207976A JP S5286086 A JPS5286086 A JP S5286086A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- drain
- gate electrode
- improve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the safety voltage of drain by being to lower than 1018/cm3 the surface impurity density of drain diffusion layer of overlapping part to the gate electrode on the MISFET formed on the semiconductive substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP207976A JPS5286086A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP207976A JPS5286086A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5286086A true JPS5286086A (en) | 1977-07-16 |
Family
ID=11519329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP207976A Pending JPS5286086A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5286086A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6091674A (en) * | 1983-10-26 | 1985-05-23 | Hitachi Ltd | Insulating gate type field-effect transistor |
JPS60128656A (en) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | Semiconductor device |
JPS6114765A (en) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | Insulated gate field effect transistor |
-
1976
- 1976-01-12 JP JP207976A patent/JPS5286086A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6091674A (en) * | 1983-10-26 | 1985-05-23 | Hitachi Ltd | Insulating gate type field-effect transistor |
JPS60128656A (en) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | Semiconductor device |
JPS6114765A (en) * | 1984-06-29 | 1986-01-22 | Shindengen Electric Mfg Co Ltd | Insulated gate field effect transistor |
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