JPS538080A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS538080A
JPS538080A JP3425377A JP3425377A JPS538080A JP S538080 A JPS538080 A JP S538080A JP 3425377 A JP3425377 A JP 3425377A JP 3425377 A JP3425377 A JP 3425377A JP S538080 A JPS538080 A JP S538080A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3425377A
Other languages
Japanese (ja)
Other versions
JPS5532233B2 (en
Inventor
Hiroshi Hara
Yoshiyuki Takeishi
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3425377A priority Critical patent/JPS538080A/en
Publication of JPS538080A publication Critical patent/JPS538080A/en
Publication of JPS5532233B2 publication Critical patent/JPS5532233B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: Drain breakdown voltage is increased by providing a buried layer of a semiconductor or metal in a gate insulation film and capturing carriers in the buried layer or at the boundary face with the gate film.
COPYRIGHT: (C)1978,JPO&Japio
JP3425377A 1977-03-28 1977-03-28 Insulated gate type field effect transistor Granted JPS538080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3425377A JPS538080A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3425377A JPS538080A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1708771A Division JPS5124230B1 (en) 1971-03-25 1971-03-25

Publications (2)

Publication Number Publication Date
JPS538080A true JPS538080A (en) 1978-01-25
JPS5532233B2 JPS5532233B2 (en) 1980-08-23

Family

ID=12408997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3425377A Granted JPS538080A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS538080A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162302A (en) * 1982-03-19 1983-09-27 日立工機株式会社 Electric plane
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932711U (en) * 1982-08-27 1984-02-29 本田技研工業株式会社 Fastening structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162302A (en) * 1982-03-19 1983-09-27 日立工機株式会社 Electric plane
US5040045A (en) * 1990-05-17 1991-08-13 U.S. Philips Corporation High voltage MOS transistor having shielded crossover path for a high voltage connection bus

Also Published As

Publication number Publication date
JPS5532233B2 (en) 1980-08-23

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