JPS538080A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS538080A JPS538080A JP3425377A JP3425377A JPS538080A JP S538080 A JPS538080 A JP S538080A JP 3425377 A JP3425377 A JP 3425377A JP 3425377 A JP3425377 A JP 3425377A JP S538080 A JPS538080 A JP S538080A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- insulated gate
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: Drain breakdown voltage is increased by providing a buried layer of a semiconductor or metal in a gate insulation film and capturing carriers in the buried layer or at the boundary face with the gate film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425377A JPS538080A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425377A JPS538080A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1708771A Division JPS5124230B1 (en) | 1971-03-25 | 1971-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS538080A true JPS538080A (en) | 1978-01-25 |
JPS5532233B2 JPS5532233B2 (en) | 1980-08-23 |
Family
ID=12408997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3425377A Granted JPS538080A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS538080A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58162302A (en) * | 1982-03-19 | 1983-09-27 | 日立工機株式会社 | Electric plane |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932711U (en) * | 1982-08-27 | 1984-02-29 | 本田技研工業株式会社 | Fastening structure |
-
1977
- 1977-03-28 JP JP3425377A patent/JPS538080A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58162302A (en) * | 1982-03-19 | 1983-09-27 | 日立工機株式会社 | Electric plane |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
Also Published As
Publication number | Publication date |
---|---|
JPS5532233B2 (en) | 1980-08-23 |
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