JPS5310983A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5310983A
JPS5310983A JP3425177A JP3425177A JPS5310983A JP S5310983 A JPS5310983 A JP S5310983A JP 3425177 A JP3425177 A JP 3425177A JP 3425177 A JP3425177 A JP 3425177A JP S5310983 A JPS5310983 A JP S5310983A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3425177A
Other languages
Japanese (ja)
Other versions
JPS5532231B2 (en
Inventor
Hiroshi Hara
Yoshiyuki Takeishi
Tai Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3425177A priority Critical patent/JPS5310983A/en
Publication of JPS5310983A publication Critical patent/JPS5310983A/en
Publication of JPS5532231B2 publication Critical patent/JPS5532231B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To increase drain breakdown voltage even with thin gate insulation films of 100 to 800 Å in thickness by burying a metal or semiconductor within the gate insulation films and trapping electrons or holes therein or in the surface level produced between the gate insulation layers.
COPYRIGHT: (C)1978,JPO&Japio
JP3425177A 1977-03-28 1977-03-28 Insulated gate type field effect transistor Granted JPS5310983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3425177A JPS5310983A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3425177A JPS5310983A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1708771A Division JPS5124230B1 (en) 1971-03-25 1971-03-25

Publications (2)

Publication Number Publication Date
JPS5310983A true JPS5310983A (en) 1978-01-31
JPS5532231B2 JPS5532231B2 (en) 1980-08-23

Family

ID=12408939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3425177A Granted JPS5310983A (en) 1977-03-28 1977-03-28 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5310983A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428265A (en) * 1990-05-23 1992-01-30 Seiko Instr Inc Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0428265A (en) * 1990-05-23 1992-01-30 Seiko Instr Inc Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5532231B2 (en) 1980-08-23

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