JPS5310983A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS5310983A JPS5310983A JP3425177A JP3425177A JPS5310983A JP S5310983 A JPS5310983 A JP S5310983A JP 3425177 A JP3425177 A JP 3425177A JP 3425177 A JP3425177 A JP 3425177A JP S5310983 A JPS5310983 A JP S5310983A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- insulated gate
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To increase drain breakdown voltage even with thin gate insulation films of 100 to 800 Å in thickness by burying a metal or semiconductor within the gate insulation films and trapping electrons or holes therein or in the surface level produced between the gate insulation layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425177A JPS5310983A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3425177A JPS5310983A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1708771A Division JPS5124230B1 (en) | 1971-03-25 | 1971-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5310983A true JPS5310983A (en) | 1978-01-31 |
JPS5532231B2 JPS5532231B2 (en) | 1980-08-23 |
Family
ID=12408939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3425177A Granted JPS5310983A (en) | 1977-03-28 | 1977-03-28 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5310983A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428265A (en) * | 1990-05-23 | 1992-01-30 | Seiko Instr Inc | Semiconductor device and manufacture thereof |
-
1977
- 1977-03-28 JP JP3425177A patent/JPS5310983A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0428265A (en) * | 1990-05-23 | 1992-01-30 | Seiko Instr Inc | Semiconductor device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5532231B2 (en) | 1980-08-23 |
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