JPS53126875A - Gate protecting device - Google Patents
Gate protecting deviceInfo
- Publication number
- JPS53126875A JPS53126875A JP4146477A JP4146477A JPS53126875A JP S53126875 A JPS53126875 A JP S53126875A JP 4146477 A JP4146477 A JP 4146477A JP 4146477 A JP4146477 A JP 4146477A JP S53126875 A JPS53126875 A JP S53126875A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- gate protecting
- protecting device
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002633 protecting effect Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To enhance gate protecting effect by forming an impurity layer implanted with an impurity of likewise opposite conductivity type at 10<18> atom/cm<2> or under near the substrate surface between the mutually spaced two oppositive conductivity type regions formed within a one-conductivity type semiconductor and covering said layer with an insulation layer having a dielectric strength of more than 200V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4146477A JPS53126875A (en) | 1977-04-13 | 1977-04-13 | Gate protecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4146477A JPS53126875A (en) | 1977-04-13 | 1977-04-13 | Gate protecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53126875A true JPS53126875A (en) | 1978-11-06 |
Family
ID=12609088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4146477A Pending JPS53126875A (en) | 1977-04-13 | 1977-04-13 | Gate protecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53126875A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830160A (en) * | 1981-08-17 | 1983-02-22 | Fujitsu Ltd | Mis type semiconductor device |
US5500542A (en) * | 1993-02-12 | 1996-03-19 | Fujitsu Limited | Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor |
JPH08222643A (en) * | 1995-02-10 | 1996-08-30 | Nec Corp | Input protective circuit for semiconductor device |
US6002155A (en) * | 1993-02-12 | 1999-12-14 | Fujitsu Limited | Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor |
US6667538B2 (en) * | 2000-05-24 | 2003-12-23 | Sony Corporation | Semiconductor device having semiconductor resistance element and fabrication method thereof |
-
1977
- 1977-04-13 JP JP4146477A patent/JPS53126875A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830160A (en) * | 1981-08-17 | 1983-02-22 | Fujitsu Ltd | Mis type semiconductor device |
US5500542A (en) * | 1993-02-12 | 1996-03-19 | Fujitsu Limited | Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor |
US5672895A (en) * | 1993-02-12 | 1997-09-30 | Fujitsu, Ltd. | Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor |
US6002155A (en) * | 1993-02-12 | 1999-12-14 | Fujitsu Limited | Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor |
JPH08222643A (en) * | 1995-02-10 | 1996-08-30 | Nec Corp | Input protective circuit for semiconductor device |
US6667538B2 (en) * | 2000-05-24 | 2003-12-23 | Sony Corporation | Semiconductor device having semiconductor resistance element and fabrication method thereof |
US6902992B2 (en) | 2000-05-24 | 2005-06-07 | Sony Corporation | Method of fabricating semiconductor device having semiconductor resistance element |
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