JPS5289476A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5289476A JPS5289476A JP493676A JP493676A JPS5289476A JP S5289476 A JPS5289476 A JP S5289476A JP 493676 A JP493676 A JP 493676A JP 493676 A JP493676 A JP 493676A JP S5289476 A JPS5289476 A JP S5289476A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor device
- diffusion layer
- wiring
- membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To reduce contact surface between metallic wiring and diffusion layer by forming conductive membrane by covering opposing part against opening part on protective and insulative membrane to get contact with diffusing layer and conductive layer for wiring at the border of at least diffusion layer or gate electrode in MOS IC.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP493676A JPS5289476A (en) | 1976-01-21 | 1976-01-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP493676A JPS5289476A (en) | 1976-01-21 | 1976-01-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5289476A true JPS5289476A (en) | 1977-07-27 |
Family
ID=11597453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP493676A Pending JPS5289476A (en) | 1976-01-21 | 1976-01-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5289476A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556870A (en) * | 1978-06-29 | 1980-01-18 | Nec Corp | Mos type semiconductor device |
JPS5563875A (en) * | 1978-11-06 | 1980-05-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method of mis transistor |
-
1976
- 1976-01-21 JP JP493676A patent/JPS5289476A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS556870A (en) * | 1978-06-29 | 1980-01-18 | Nec Corp | Mos type semiconductor device |
JPS5563875A (en) * | 1978-11-06 | 1980-05-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacturing method of mis transistor |
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