JPS5735370A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5735370A
JPS5735370A JP11060180A JP11060180A JPS5735370A JP S5735370 A JPS5735370 A JP S5735370A JP 11060180 A JP11060180 A JP 11060180A JP 11060180 A JP11060180 A JP 11060180A JP S5735370 A JPS5735370 A JP S5735370A
Authority
JP
Japan
Prior art keywords
region
base
type
silicide layer
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11060180A
Other languages
Japanese (ja)
Other versions
JPS6346990B2 (en
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11060180A priority Critical patent/JPS5735370A/en
Publication of JPS5735370A publication Critical patent/JPS5735370A/en
Publication of JPS6346990B2 publication Critical patent/JPS6346990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the base resistance by connecting a metal silicide layer provided on the surface of an inactive base region to an external eletrode through a hole part in an insulting film. CONSTITUTION:The device is constituted by an N type collector region 11, a P type ba region 12, an N type emitter region 13, and external electrode 17 and 17' in said regions. A platinum silicide layer 15 is provided on the surface of the base region 12, and the resistance from the external electrode 17 for the base on the hole provided in the insulating film 16 to the emitter region 13 is decreased.
JP11060180A 1980-08-12 1980-08-12 Semiconductor device Granted JPS5735370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11060180A JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11060180A JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735370A true JPS5735370A (en) 1982-02-25
JPS6346990B2 JPS6346990B2 (en) 1988-09-20

Family

ID=14539976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11060180A Granted JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735370A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169971A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS59132663A (en) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp Transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236477A (en) * 1975-09-17 1977-03-19 Philips Nv Method of producing semiconductor device
JPS5472673A (en) * 1977-11-21 1979-06-11 Nec Corp Semicondcutor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5236477A (en) * 1975-09-17 1977-03-19 Philips Nv Method of producing semiconductor device
JPS5472673A (en) * 1977-11-21 1979-06-11 Nec Corp Semicondcutor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169971A (en) * 1982-03-30 1983-10-06 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH0247853B2 (en) * 1982-03-30 1990-10-23 Fujitsu Ltd
JPS59132663A (en) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp Transistor

Also Published As

Publication number Publication date
JPS6346990B2 (en) 1988-09-20

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