JPS5648171A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5648171A
JPS5648171A JP12411179A JP12411179A JPS5648171A JP S5648171 A JPS5648171 A JP S5648171A JP 12411179 A JP12411179 A JP 12411179A JP 12411179 A JP12411179 A JP 12411179A JP S5648171 A JPS5648171 A JP S5648171A
Authority
JP
Japan
Prior art keywords
electrode
region
emitter
transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12411179A
Other languages
Japanese (ja)
Other versions
JPS6248905B2 (en
Inventor
Koji Takebe
Haruo Hondo
Takahiko Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12411179A priority Critical patent/JPS5648171A/en
Publication of JPS5648171A publication Critical patent/JPS5648171A/en
Publication of JPS6248905B2 publication Critical patent/JPS6248905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To unit a resistor and a transistor and increase the degree of integration by separating the emitter electrode of the transistor formed on the surface of a semiconductor substrate into a main electrode and a detection electrode and providing a semiconductor resistor layer between the main electrode and an emitter region. CONSTITUTION:In an N type Si substrate 1 which becomes a collector region, a P type base region 2 is diffusion formed, and in the region, an N<+> type emitter region 3 is made, and thus a power NPN transistor is formed. Next, a window is made in an insulating film that covers the entire surface, and then a base electrode 4 is attached to the region 2, a terminal C to the back face of the substrate 1, an emitter electrode to the region 3, and when doing so, the emitter electrode is divided into a main electrode 5 and a detecting electrode 7, a semiconductor resistor layer 6 contacting the region 3 is interposed under the electrode 5, and the electrode 7 is made into a small area one positioning at the end of the region 3. Then a terminal E provided for the electrode 5 is connected to the emitter of the second transistor T2 for wideback, its collector is connected to the electrode 4 and its base is connected to the electrode 7.
JP12411179A 1979-09-28 1979-09-28 Semiconductor device Granted JPS5648171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12411179A JPS5648171A (en) 1979-09-28 1979-09-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12411179A JPS5648171A (en) 1979-09-28 1979-09-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5648171A true JPS5648171A (en) 1981-05-01
JPS6248905B2 JPS6248905B2 (en) 1987-10-16

Family

ID=14877187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12411179A Granted JPS5648171A (en) 1979-09-28 1979-09-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5648171A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device
JPH073854B2 (en) * 1985-12-18 1995-01-18 株式会社日立製作所 Composite semiconductor device

Also Published As

Publication number Publication date
JPS6248905B2 (en) 1987-10-16

Similar Documents

Publication Publication Date Title
JPS54157092A (en) Semiconductor integrated circuit device
JPS56162864A (en) Semiconductor device
JPS5648171A (en) Semiconductor device
JPS57162365A (en) Semiconductor device
JPS56148863A (en) Manufacture of semiconductor device
JPS5735370A (en) Semiconductor device
JPS55151359A (en) Semiconductor device
JPS56112752A (en) Semiconductor device
JPS5710968A (en) Semiconductor device
JPS5635456A (en) Semiconductor integrated circuit
JPS55154760A (en) Semiconductor device
JPS5325354A (en) Semiconductor device
JPS5618464A (en) Semiconductor device
JPS5511393A (en) Semiconductor device
JPS57155773A (en) High pressure-resistant planar transistor
JPS5784170A (en) Semiconductor device
JPS5479575A (en) Semiconductor integrated-circuit device
JPS5715466A (en) Semiconductor device
JPS572580A (en) Semiconductor device
JPS5271994A (en) Semiconductor integrated circuit device
JPS5378188A (en) Photo semiconductor device
JPS56115565A (en) Semiconductor device
JPS55163871A (en) Semiconductor integrated circuit device
JPS57180166A (en) Semiconductor device
JPS5779657A (en) Semiconductor device