JPS56162864A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56162864A
JPS56162864A JP6538180A JP6538180A JPS56162864A JP S56162864 A JPS56162864 A JP S56162864A JP 6538180 A JP6538180 A JP 6538180A JP 6538180 A JP6538180 A JP 6538180A JP S56162864 A JPS56162864 A JP S56162864A
Authority
JP
Japan
Prior art keywords
emitter
electrode
region
lattice
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6538180A
Other languages
Japanese (ja)
Inventor
Tatsuaki Kunimitsu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6538180A priority Critical patent/JPS56162864A/en
Publication of JPS56162864A publication Critical patent/JPS56162864A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • H01L29/0808Emitter regions of bipolar transistors of lateral transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708Emitter or collector electrodes for bipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE: To obtain a lateral transistor having low collector saturated resistor and small element area by forming a lattice collector region surrounding an emitter region and leading an electrode via multilayer wire.
CONSTITUTION: An n type epitaxial layer 11 is formed on a p type Si substrate 10. Then, a p+ type emitter region 2 and a p+ type collector region 3 arranged in lattice state around the emitter region 2 are formed. An insulating film 4 is formed, and lattice-shaped collector aluminum electrode 5, a base aluminum electrode 8 connected to the base region 11 and an emiter electrode 16 are formed along the surface of the lattice-shaped collector region 3. Interlayer insulating film 6 is laminated, an emitter electrode is exposed, branched emitter aluminum electrode is formed, and the respective emitter regions are connected. The electrode 5 is so formed as to surround the emitter in lattice shape, and the collector saturated resistance can be reduced.
COPYRIGHT: (C)1981,JPO&Japio
JP6538180A 1980-05-19 1980-05-19 Semiconductor device Pending JPS56162864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6538180A JPS56162864A (en) 1980-05-19 1980-05-19 Semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6538180A JPS56162864A (en) 1980-05-19 1980-05-19 Semiconductor device
GB8113205A GB2077491A (en) 1980-05-19 1981-04-29 Lateral transistors
DE19813119288 DE3119288A1 (en) 1980-05-19 1981-05-14 SEMICONDUCTOR ARRANGEMENT
IT2178181A IT1135846B (en) 1980-05-19 1981-05-18 Semi-conductor device equipped with lateral transistor

Publications (1)

Publication Number Publication Date
JPS56162864A true JPS56162864A (en) 1981-12-15

Family

ID=13285337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6538180A Pending JPS56162864A (en) 1980-05-19 1980-05-19 Semiconductor device

Country Status (4)

Country Link
JP (1) JPS56162864A (en)
DE (1) DE3119288A1 (en)
GB (1) GB2077491A (en)
IT (1) IT1135846B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153550U (en) * 1984-03-24 1985-10-12
JPS62183175A (en) * 1986-02-06 1987-08-11 Nec Corp Interconnection structure of lateral element
JPS62298173A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS6312859U (en) * 1986-07-10 1988-01-27
JPH01235380A (en) * 1988-03-16 1989-09-20 Fujitsu Ltd Semiconductor integrated circuit device
JPH0271529A (en) * 1988-09-06 1990-03-12 Fuji Electric Co Ltd Horizontal type bipolar transistor
US4924288A (en) * 1987-06-11 1990-05-08 Unitrode Corporation High current-gain PNP transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3573357D1 (en) * 1984-12-27 1989-11-02 Siemens Ag Semiconductor power switch
FR2592526B1 (en) * 1985-12-31 1988-10-14 Radiotechnique Compelec Integrated circuit comprising a lateral transistor
US4712126A (en) * 1986-03-17 1987-12-08 Rca Corporation Low resistance tunnel
FR2625611B1 (en) * 1987-12-30 1990-05-04 Radiotechnique Compelec Integrated circuit with lateral transistor
FR2687843A1 (en) * 1992-02-24 1993-08-27 Motorola Semiconducteurs PNP BIPOLAR LATERAL TRANSISTOR AND METHOD FOR MANUFACTURING SAME.
EA015205B1 (en) * 2005-11-07 2011-06-30 Броня ЦОЙ Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136562C (en) * 1963-10-24
JPS5025306B1 (en) * 1968-04-04 1975-08-22

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153550U (en) * 1984-03-24 1985-10-12
JPS62183175A (en) * 1986-02-06 1987-08-11 Nec Corp Interconnection structure of lateral element
JPS62298173A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS6312859U (en) * 1986-07-10 1988-01-27
US4924288A (en) * 1987-06-11 1990-05-08 Unitrode Corporation High current-gain PNP transistor
JPH01235380A (en) * 1988-03-16 1989-09-20 Fujitsu Ltd Semiconductor integrated circuit device
JPH0271529A (en) * 1988-09-06 1990-03-12 Fuji Electric Co Ltd Horizontal type bipolar transistor

Also Published As

Publication number Publication date
DE3119288A1 (en) 1982-06-09
IT8121781D0 (en) 1981-05-18
GB2077491A (en) 1981-12-16
IT1135846B (en) 1986-08-27

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