JPS55154760A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55154760A
JPS55154760A JP6299279A JP6299279A JPS55154760A JP S55154760 A JPS55154760 A JP S55154760A JP 6299279 A JP6299279 A JP 6299279A JP 6299279 A JP6299279 A JP 6299279A JP S55154760 A JPS55154760 A JP S55154760A
Authority
JP
Japan
Prior art keywords
region
base
regions
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299279A
Other languages
Japanese (ja)
Other versions
JPS6225269B2 (en
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6299279A priority Critical patent/JPS55154760A/en
Publication of JPS55154760A publication Critical patent/JPS55154760A/en
Publication of JPS6225269B2 publication Critical patent/JPS6225269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To largely reduce a high level input current of a semiconductor device such as a two-emitter transistor by forming a base auxiliary electrode independent not only from a nomal base electrode but from any portion in addition to the normal base electrode. CONSTITUTION:A collector region 2 is diffused and formed in a semiconductor substrate 1, a base region 3 is formed at the center and collector contact region 4 is formed at the end. Then, two emitter regions 11 and 12 are diffused and formed at predetermined interval in the region 3, and an oxide film 7 is coated on the entire surface. Thereafter, signal wires 31-33 are formed on the film 7 between two regions 11 and 12, openings are perforated at the rilm 7, emitter electrodes 21 and 22 are mounted therethrough on the regions 11 and 12. Normal base electrodes 6 are formed at the collector contact electrode 5 from the region 2 to the end of the region 3 on the region 4, and independent base auxiliary electrodes similarly over the regions 3 and 2 are so formed at the side confronting the electrodes 6 as to be ohmically on the region 3 and to form a Schottky barrier on the region 2.
JP6299279A 1979-05-22 1979-05-22 Semiconductor device Granted JPS55154760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154760A true JPS55154760A (en) 1980-12-02
JPS6225269B2 JPS6225269B2 (en) 1987-06-02

Family

ID=13216366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299279A Granted JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154760A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403928A2 (en) * 2002-09-27 2004-03-31 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403928A2 (en) * 2002-09-27 2004-03-31 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making
EP1403928A3 (en) * 2002-09-27 2006-11-22 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making

Also Published As

Publication number Publication date
JPS6225269B2 (en) 1987-06-02

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