JPS5681970A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
JPS5681970A
JPS5681970A JP15968279A JP15968279A JPS5681970A JP S5681970 A JPS5681970 A JP S5681970A JP 15968279 A JP15968279 A JP 15968279A JP 15968279 A JP15968279 A JP 15968279A JP S5681970 A JPS5681970 A JP S5681970A
Authority
JP
Japan
Prior art keywords
layer
type
region
auxiliary
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15968279A
Other languages
Japanese (ja)
Inventor
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15968279A priority Critical patent/JPS5681970A/en
Publication of JPS5681970A publication Critical patent/JPS5681970A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Abstract

PURPOSE:To obtain a switching device having a high gate sensitivity by employing an auxiliary thyristor unit as a transistor function, based upon the fact that the drive current supply capacity of a gate current amplifying function unit is satisfactory enough if it is maintained for a short period of time necessary for turning ON and OFF the main thyristor unit. CONSTITUTION:A p type first emitter region 10 is diffused in a layer 101 of an n type first base layer formed of n<+> type layer 101 and n type layer 11, while a p type second base layer 12 is formed at the side of layer 11, and n type second emitter region 13 divided into plurality and one n type third emitter region 14 are diffused therein. With the configuration the auxiliary thyristor 23 of the part 23 of the device is used as a transistor, and the part 24 adjacent to the transistor is used as a main thyristor. Thereafter, an anode 17 is coated on the layer 101 exposed adjacent to the region 10, a cathode 19 is covered on the region 13, and a gate electrode 20 is covered on the layer 12, and auxiliary emitter electrode 21 and auxiliary electrode 22 connected thereto are mounted on the layer 12 in the region 14.
JP15968279A 1979-12-07 1979-12-07 Semiconductor switching device Pending JPS5681970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15968279A JPS5681970A (en) 1979-12-07 1979-12-07 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15968279A JPS5681970A (en) 1979-12-07 1979-12-07 Semiconductor switching device

Publications (1)

Publication Number Publication Date
JPS5681970A true JPS5681970A (en) 1981-07-04

Family

ID=15699014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15968279A Pending JPS5681970A (en) 1979-12-07 1979-12-07 Semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS5681970A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
EP0714139A1 (en) * 1994-11-25 1996-05-29 STMicroelectronics S.A. Break-over triggered two-terminal device with controlled sensitivity
EP2483928B1 (en) * 2009-09-30 2018-01-24 Infineon Technologies Bipolar GmbH & Co. KG Trigger stage thyristor having decoupled trigger stage

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
JPH027191B2 (en) * 1983-05-26 1990-02-15 Tokyo Shibaura Electric Co
EP0714139A1 (en) * 1994-11-25 1996-05-29 STMicroelectronics S.A. Break-over triggered two-terminal device with controlled sensitivity
FR2727571A1 (en) * 1994-11-25 1996-05-31 Sgs Thomson Microelectronics THYRISTOR WITH SENSITIVITY IN CONTROLLED RETURN
US5861639A (en) * 1994-11-25 1999-01-19 Sgs-Thomson Microelectronics S.A. Breakover-triggered dipole component having a controlled sensitivity
EP2483928B1 (en) * 2009-09-30 2018-01-24 Infineon Technologies Bipolar GmbH & Co. KG Trigger stage thyristor having decoupled trigger stage

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