JPS5269281A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5269281A
JPS5269281A JP14574575A JP14574575A JPS5269281A JP S5269281 A JPS5269281 A JP S5269281A JP 14574575 A JP14574575 A JP 14574575A JP 14574575 A JP14574575 A JP 14574575A JP S5269281 A JPS5269281 A JP S5269281A
Authority
JP
Japan
Prior art keywords
thyristor
gate turn
protion
wide
receive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14574575A
Other languages
Japanese (ja)
Inventor
Masahiro Kuwagata
Masao Yamada
Tadao Konishi
Shuji Nakada
Kenichiro Nakamura
Yorisada Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14574575A priority Critical patent/JPS5269281A/en
Publication of JPS5269281A publication Critical patent/JPS5269281A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent current crowding to a point by forming a diffusion region in a semiconductor substrate as the stated procedure and by making to receive an anode current to the wide protion.
JP14574575A 1975-12-05 1975-12-05 Gate turn-off thyristor Pending JPS5269281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14574575A JPS5269281A (en) 1975-12-05 1975-12-05 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14574575A JPS5269281A (en) 1975-12-05 1975-12-05 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5269281A true JPS5269281A (en) 1977-06-08

Family

ID=15392158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14574575A Pending JPS5269281A (en) 1975-12-05 1975-12-05 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5269281A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464469U (en) * 1977-10-15 1979-05-08
JPS57169270A (en) * 1981-04-10 1982-10-18 Meidensha Electric Mfg Co Ltd Gate turn of thyristor
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
JPH0685244A (en) * 1992-04-07 1994-03-25 Toyo Electric Mfg Co Ltd Semiconductor element having electrostatic induction buffer structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088986A (en) * 1973-12-10 1975-07-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088986A (en) * 1973-12-10 1975-07-17

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464469U (en) * 1977-10-15 1979-05-08
JPS6141316Y2 (en) * 1977-10-15 1986-11-25
US4450467A (en) * 1978-09-14 1984-05-22 Hitachi, Ltd. Gate turn-off thyristor with selective anode penetrating shorts
JPS57169270A (en) * 1981-04-10 1982-10-18 Meidensha Electric Mfg Co Ltd Gate turn of thyristor
JPH0685244A (en) * 1992-04-07 1994-03-25 Toyo Electric Mfg Co Ltd Semiconductor element having electrostatic induction buffer structure

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