JPS51136290A - Short emitter type thyristor - Google Patents
Short emitter type thyristorInfo
- Publication number
- JPS51136290A JPS51136290A JP5960775A JP5960775A JPS51136290A JP S51136290 A JPS51136290 A JP S51136290A JP 5960775 A JP5960775 A JP 5960775A JP 5960775 A JP5960775 A JP 5960775A JP S51136290 A JPS51136290 A JP S51136290A
- Authority
- JP
- Japan
- Prior art keywords
- emitter type
- type thyristor
- short emitter
- short
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:Prevention for conductive area concentration and element degradation by properly shaping the base layer formed in adjacent to cathode side emitter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5960775A JPS51136290A (en) | 1975-05-21 | 1975-05-21 | Short emitter type thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5960775A JPS51136290A (en) | 1975-05-21 | 1975-05-21 | Short emitter type thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51136290A true JPS51136290A (en) | 1976-11-25 |
Family
ID=13118100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5960775A Pending JPS51136290A (en) | 1975-05-21 | 1975-05-21 | Short emitter type thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51136290A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58222571A (en) * | 1982-06-19 | 1983-12-24 | Mitsubishi Electric Corp | Thyristor |
US20130105857A1 (en) * | 2010-06-21 | 2013-05-02 | Abb Technology Ag | Phase control thyristor with improved pattern of local emitter shorts dots |
-
1975
- 1975-05-21 JP JP5960775A patent/JPS51136290A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58222571A (en) * | 1982-06-19 | 1983-12-24 | Mitsubishi Electric Corp | Thyristor |
US20130105857A1 (en) * | 2010-06-21 | 2013-05-02 | Abb Technology Ag | Phase control thyristor with improved pattern of local emitter shorts dots |
US9142656B2 (en) * | 2010-06-21 | 2015-09-22 | Abb Technology Ag | Phase control thyristor with improved pattern of local emitter shorts dots |
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