JPS5231691A - Semiconductor luminous device - Google Patents
Semiconductor luminous deviceInfo
- Publication number
- JPS5231691A JPS5231691A JP10769975A JP10769975A JPS5231691A JP S5231691 A JPS5231691 A JP S5231691A JP 10769975 A JP10769975 A JP 10769975A JP 10769975 A JP10769975 A JP 10769975A JP S5231691 A JPS5231691 A JP S5231691A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor luminous
- capity
- promote
- reduce
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Abstract
PURPOSE: To promote Q of the capity and reduce the threshold current, by means of forming the translucent metallic thin frame and high resistance layer on the corrugated opening.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10769975A JPS5231691A (en) | 1975-09-04 | 1975-09-04 | Semiconductor luminous device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10769975A JPS5231691A (en) | 1975-09-04 | 1975-09-04 | Semiconductor luminous device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5231691A true JPS5231691A (en) | 1977-03-10 |
Family
ID=14465701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10769975A Pending JPS5231691A (en) | 1975-09-04 | 1975-09-04 | Semiconductor luminous device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5231691A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107587A (en) * | 1980-01-31 | 1981-08-26 | Toshiba Corp | End radiation type light emitting diode |
US4558448A (en) * | 1981-09-02 | 1985-12-10 | U.S. Philips Corporation | Semiconductor laser with end zones for reducing non-radiating recombination |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4994292A (en) * | 1973-01-11 | 1974-09-06 |
-
1975
- 1975-09-04 JP JP10769975A patent/JPS5231691A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4994292A (en) * | 1973-01-11 | 1974-09-06 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56107587A (en) * | 1980-01-31 | 1981-08-26 | Toshiba Corp | End radiation type light emitting diode |
US4558448A (en) * | 1981-09-02 | 1985-12-10 | U.S. Philips Corporation | Semiconductor laser with end zones for reducing non-radiating recombination |
US4670966A (en) * | 1981-09-02 | 1987-06-09 | U.S. Philips Corporation | Method of making a semiconductor laser with end zones for reducing non-radiating recombination |
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