JPS51151090A - Semiconductor laser apparatus and its manufacturing method - Google Patents

Semiconductor laser apparatus and its manufacturing method

Info

Publication number
JPS51151090A
JPS51151090A JP50075902A JP7590275A JPS51151090A JP S51151090 A JPS51151090 A JP S51151090A JP 50075902 A JP50075902 A JP 50075902A JP 7590275 A JP7590275 A JP 7590275A JP S51151090 A JPS51151090 A JP S51151090A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser apparatus
manufacturing
gaas
setting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50075902A
Other languages
Japanese (ja)
Other versions
JPS5811111B2 (en
Inventor
Morio Inoue
Kunio Ito
Kunihiko Asahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50075902A priority Critical patent/JPS5811111B2/en
Priority to GB24342/76A priority patent/GB1543220A/en
Priority to CA255,114A priority patent/CA1077607A/en
Priority to DE2627355A priority patent/DE2627355C3/en
Priority to FR7618712A priority patent/FR2316747A1/en
Publication of JPS51151090A publication Critical patent/JPS51151090A/en
Priority to US05/873,522 priority patent/US4149175A/en
Publication of JPS5811111B2 publication Critical patent/JPS5811111B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the semiconductor laser apparatus of the long life, which has small distortion and, also, low resistance threshold, setting the stripe domain of high resistance ratio, also, to n-GaAs of the base.
JP50075902A 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device Expired JPS5811111B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP50075902A JPS5811111B2 (en) 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device
GB24342/76A GB1543220A (en) 1975-06-20 1976-06-11 Solid state light-emitting device and method of making the same
CA255,114A CA1077607A (en) 1975-06-20 1976-06-17 Solid state light-emitting device and method of making the same
DE2627355A DE2627355C3 (en) 1975-06-20 1976-06-18 Solid state light emitting device and method for making the same
FR7618712A FR2316747A1 (en) 1975-06-20 1976-06-18 SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS
US05/873,522 US4149175A (en) 1975-06-20 1978-01-30 Solidstate light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50075902A JPS5811111B2 (en) 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS51151090A true JPS51151090A (en) 1976-12-25
JPS5811111B2 JPS5811111B2 (en) 1983-03-01

Family

ID=13589720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50075902A Expired JPS5811111B2 (en) 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device

Country Status (5)

Country Link
JP (1) JPS5811111B2 (en)
CA (1) CA1077607A (en)
DE (1) DE2627355C3 (en)
FR (1) FR2316747A1 (en)
GB (1) GB1543220A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138689A (en) * 1977-05-06 1978-12-04 Western Electric Co Method of producing light emitting diode
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS57152185A (en) * 1981-02-17 1982-09-20 Siemens Ag Method of producing light emitting diode or laser diode
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS63248167A (en) * 1987-04-02 1988-10-14 Nec Corp Manufacture of hetero-junction bipolar transistor
JPS63248168A (en) * 1987-04-02 1988-10-14 Nec Corp Hetero-junction bipolar transistor and manufacture thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194933A (en) * 1977-05-06 1980-03-25 Bell Telephone Laboratories, Incorporated Method for fabricating junction lasers having lateral current confinement
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
DE10008584A1 (en) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Semiconductor component for the emission of electromagnetic radiation and method for its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946878A (en) * 1972-09-08 1974-05-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946878A (en) * 1972-09-08 1974-05-07

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138689A (en) * 1977-05-06 1978-12-04 Western Electric Co Method of producing light emitting diode
JPS5963781A (en) * 1977-05-06 1984-04-11 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド Light emitting structure
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPH0370391B2 (en) * 1981-02-16 1991-11-07 Sanyo Electric Co
JPS57152185A (en) * 1981-02-17 1982-09-20 Siemens Ag Method of producing light emitting diode or laser diode
JPH0136715B2 (en) * 1981-02-17 1989-08-02 Siemens Ag
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS63248167A (en) * 1987-04-02 1988-10-14 Nec Corp Manufacture of hetero-junction bipolar transistor
JPS63248168A (en) * 1987-04-02 1988-10-14 Nec Corp Hetero-junction bipolar transistor and manufacture thereof

Also Published As

Publication number Publication date
FR2316747A1 (en) 1977-01-28
JPS5811111B2 (en) 1983-03-01
DE2627355B2 (en) 1978-07-20
DE2627355C3 (en) 1979-03-22
FR2316747B1 (en) 1980-08-14
GB1543220A (en) 1979-03-28
DE2627355A1 (en) 1976-12-23
CA1077607A (en) 1980-05-13

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