FR2316747A1 - SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS - Google Patents

SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS

Info

Publication number
FR2316747A1
FR2316747A1 FR7618712A FR7618712A FR2316747A1 FR 2316747 A1 FR2316747 A1 FR 2316747A1 FR 7618712 A FR7618712 A FR 7618712A FR 7618712 A FR7618712 A FR 7618712A FR 2316747 A1 FR2316747 A1 FR 2316747A1
Authority
FR
France
Prior art keywords
emitting device
manufacturing process
solid state
state photo
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7618712A
Other languages
French (fr)
Other versions
FR2316747B1 (en
Inventor
Morio Inoue
Kunio Itoh
Kunihiko Asahi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2316747A1 publication Critical patent/FR2316747A1/en
Application granted granted Critical
Publication of FR2316747B1 publication Critical patent/FR2316747B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
FR7618712A 1975-06-20 1976-06-18 SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS Granted FR2316747A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50075902A JPS5811111B2 (en) 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device

Publications (2)

Publication Number Publication Date
FR2316747A1 true FR2316747A1 (en) 1977-01-28
FR2316747B1 FR2316747B1 (en) 1980-08-14

Family

ID=13589720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7618712A Granted FR2316747A1 (en) 1975-06-20 1976-06-18 SOLID STATE PHOTO-EMITTING DEVICE AND ITS MANUFACTURING PROCESS

Country Status (5)

Country Link
JP (1) JPS5811111B2 (en)
CA (1) CA1077607A (en)
DE (1) DE2627355C3 (en)
FR (1) FR2316747A1 (en)
GB (1) GB1543220A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390829A1 (en) * 1977-05-06 1978-12-08 Western Electric Co DOUBLE HETEROSTRUCTURE JUNCTION LASER
EP0014588A1 (en) * 1979-02-13 1980-08-20 Fujitsu Limited A semiconductor light emitting device
EP0058231A2 (en) * 1981-02-17 1982-08-25 Siemens Aktiengesellschaft Manufacture of light emitting or laser diodes with internally limited emission area
DE10008584A1 (en) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Semiconductor component for the emission of electromagnetic radiation and method for its production

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194933A (en) * 1977-05-06 1980-03-25 Bell Telephone Laboratories, Incorporated Method for fabricating junction lasers having lateral current confinement
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS63248167A (en) * 1987-04-02 1988-10-14 Nec Corp Manufacture of hetero-junction bipolar transistor
JPS63248168A (en) * 1987-04-02 1988-10-14 Nec Corp Hetero-junction bipolar transistor and manufacture thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946878A (en) * 1972-09-08 1974-05-07

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2390829A1 (en) * 1977-05-06 1978-12-08 Western Electric Co DOUBLE HETEROSTRUCTURE JUNCTION LASER
EP0014588A1 (en) * 1979-02-13 1980-08-20 Fujitsu Limited A semiconductor light emitting device
EP0058231A2 (en) * 1981-02-17 1982-08-25 Siemens Aktiengesellschaft Manufacture of light emitting or laser diodes with internally limited emission area
EP0058231A3 (en) * 1981-02-17 1985-05-02 Siemens Aktiengesellschaft Manufacture of light emitting or laser diodes with internally limited emission area
DE10008584A1 (en) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Semiconductor component for the emission of electromagnetic radiation and method for its production
US6844565B2 (en) 2000-02-24 2005-01-18 Osram Opto Semiconductors Gmbh Semiconductor component for the emission of electromagnetic radiation and method for production thereof

Also Published As

Publication number Publication date
JPS5811111B2 (en) 1983-03-01
FR2316747B1 (en) 1980-08-14
JPS51151090A (en) 1976-12-25
DE2627355C3 (en) 1979-03-22
GB1543220A (en) 1979-03-28
DE2627355A1 (en) 1976-12-23
CA1077607A (en) 1980-05-13
DE2627355B2 (en) 1978-07-20

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