GB1543220A - Solid state light-emitting device and method of making the same - Google Patents

Solid state light-emitting device and method of making the same

Info

Publication number
GB1543220A
GB1543220A GB24342/76A GB2434276A GB1543220A GB 1543220 A GB1543220 A GB 1543220A GB 24342/76 A GB24342/76 A GB 24342/76A GB 2434276 A GB2434276 A GB 2434276A GB 1543220 A GB1543220 A GB 1543220A
Authority
GB
United Kingdom
Prior art keywords
making
same
emitting device
solid state
state light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24342/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1543220A publication Critical patent/GB1543220A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB24342/76A 1975-06-20 1976-06-11 Solid state light-emitting device and method of making the same Expired GB1543220A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50075902A JPS5811111B2 (en) 1975-06-20 1975-06-20 Manufacturing method of semiconductor laser device

Publications (1)

Publication Number Publication Date
GB1543220A true GB1543220A (en) 1979-03-28

Family

ID=13589720

Family Applications (1)

Application Number Title Priority Date Filing Date
GB24342/76A Expired GB1543220A (en) 1975-06-20 1976-06-11 Solid state light-emitting device and method of making the same

Country Status (5)

Country Link
JP (1) JPS5811111B2 (en)
CA (1) CA1077607A (en)
DE (1) DE2627355C3 (en)
FR (1) FR2316747A1 (en)
GB (1) GB1543220A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
US4194933A (en) * 1977-05-06 1980-03-25 Bell Telephone Laboratories, Incorporated Method for fabricating junction lasers having lateral current confinement
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
DE3105786A1 (en) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München MANUFACTURE OF LUMINESCENCE OR LASER DIODES WITH INTERNAL LIMITED LUMINAIRE AREA
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS60130880A (en) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp Semiconductor laser device
JPS63248168A (en) * 1987-04-02 1988-10-14 Nec Corp Hetero-junction bipolar transistor and manufacture thereof
JPS63248167A (en) * 1987-04-02 1988-10-14 Nec Corp Manufacture of hetero-junction bipolar transistor
DE10008584A1 (en) 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Semiconductor component for the emission of electromagnetic radiation and method for its production

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946878A (en) * 1972-09-08 1974-05-07

Also Published As

Publication number Publication date
FR2316747A1 (en) 1977-01-28
DE2627355A1 (en) 1976-12-23
JPS5811111B2 (en) 1983-03-01
DE2627355B2 (en) 1978-07-20
CA1077607A (en) 1980-05-13
FR2316747B1 (en) 1980-08-14
DE2627355C3 (en) 1979-03-22
JPS51151090A (en) 1976-12-25

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19960610