JPS57160186A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS57160186A
JPS57160186A JP4519181A JP4519181A JPS57160186A JP S57160186 A JPS57160186 A JP S57160186A JP 4519181 A JP4519181 A JP 4519181A JP 4519181 A JP4519181 A JP 4519181A JP S57160186 A JPS57160186 A JP S57160186A
Authority
JP
Japan
Prior art keywords
layer
liquid phase
thickness
epitaxial growth
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4519181A
Other languages
Japanese (ja)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4519181A priority Critical patent/JPS57160186A/en
Publication of JPS57160186A publication Critical patent/JPS57160186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enhance the reproducibility, homogeneity and productivity of transverse mode controllable structure, by forming a P layer for current structure by selective growth of the first liquid phase epitaxial growth prior to the second liquid phase epitaxial growth. CONSTITUTION:An SiO2 film 15 with the thickness of 4mum is formed on the surface of an n type InP semiconductor substrate 8. Next, a p type InP layer 9 is grown by the first liquid phase epitaxial growth. Then, after removing the SiO2 film 15 by etching, the second liquid phase epitaxial growth is performed to form an n type InGaAsP photoguide layer 10, InGaAsP activated layer 11 and p type InP clad layer 12. This method makes the depth of a groove same as the thickness of a p-InP layer 9 with the depth of the groove controlled by the layer thickness of the p-InP layer 9. The control for a thin layer thickness 0.1mum or less is also available owing to the growth of the p-InP layer 9 by liquid phase growing method.
JP4519181A 1981-03-27 1981-03-27 Manufacture of semiconductor laser Pending JPS57160186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4519181A JPS57160186A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4519181A JPS57160186A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57160186A true JPS57160186A (en) 1982-10-02

Family

ID=12712368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4519181A Pending JPS57160186A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57160186A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151090A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus and its manufacturing method
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151090A (en) * 1975-06-20 1976-12-25 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus and its manufacturing method
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth

Similar Documents

Publication Publication Date Title
JPS5710285A (en) Semiconductor laser
JPS5743487A (en) Semiconductor laser
JPS57160186A (en) Manufacture of semiconductor laser
JPS5493378A (en) Manufacture for semiconductor device
JPS57183091A (en) Manufacture of optical integrated circuit
JPS57187936A (en) Manufacture of 3-5 family compound semiconductor element
JPS57160187A (en) Manufacture of semiconductor laser
JPS5666084A (en) Semiconductor light-emitting element
JPS6223191A (en) Manufacture of ridge type semiconductor laser device
JPS5724591A (en) Manufacture of semiconductor laser device
JPS5555522A (en) Method of epitaxial growth at liquid phase
JP2680310B2 (en) Method for manufacturing semiconductor device
JPS57152180A (en) Manufacture of semiconductor laser device
JPS5636182A (en) Light emission semiconductor device
JPS57181186A (en) Semiconductor light emission device
JPS57109327A (en) Manufacture of semiconductor device
JPS5691489A (en) Manufacture of semiconductor laser
JPS54107354A (en) Semiconductor multilayer thin film optical guide and production of the same
JPS57198621A (en) Liquid phase epitaxial growth
JPS56157083A (en) Manufacture of semiconductor laser
JPS6433984A (en) Manufacture of semiconductor device
JPS57152179A (en) Manufacture of semiconductor laser device
JPS6422089A (en) Optically bistable semiconductor laser and its manufacture
JPS6449216A (en) Semiconductor crystal growth
JPS5629382A (en) Light emitting device of double hetero structure and manufacture thereof