JPS5629382A - Light emitting device of double hetero structure and manufacture thereof - Google Patents
Light emitting device of double hetero structure and manufacture thereofInfo
- Publication number
- JPS5629382A JPS5629382A JP10499479A JP10499479A JPS5629382A JP S5629382 A JPS5629382 A JP S5629382A JP 10499479 A JP10499479 A JP 10499479A JP 10499479 A JP10499479 A JP 10499479A JP S5629382 A JPS5629382 A JP S5629382A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- light emitting
- liquid phase
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 125000005842 heteroatom Chemical group 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000007791 liquid phase Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain the device having high light emitting efficiency by epitaxially growing an N type GaAlAs layer, a III-V group layer containing one or more kinds of Si and P type or N type impurites and a P type GaAlAs layer on an N type III- V group semiconductor substrate in a liquid phase and obtaining the double hetero structure. CONSTITUTION:At first, an N type GaAlAs layer 2 is epitaxially grown in a liquid phase in the slowly cooling process from the normal temperature at a decreasing speed of 1 deg.C/min on an N<+> type GaAs substrate 1 by using the solution comprising Ga, Al, As, and Te. Then, P type GaAs active layer 3 is epitaxially grown in a liquid phase on the layer 2 by slowly cooling at 1 deg.C/min by using the solution comprising Ga, GaAs, Si, and Te at the relatively low temperature of 800 deg.C. Thereafter, a P type GaAs layer 4 is grown on the layer 3, and an ohmic electrode 6 with a specified pattern is formed on the layer 4. An ohmic electrode 5 is deposited on all the surface of the back of the substrate 1. In this constitution, the compensation ratio of the active layer 3 is accurately adjusted, and the wavelength of the emitted light can be controlled at high light emitting efficiency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10499479A JPS5629382A (en) | 1979-08-20 | 1979-08-20 | Light emitting device of double hetero structure and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10499479A JPS5629382A (en) | 1979-08-20 | 1979-08-20 | Light emitting device of double hetero structure and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5629382A true JPS5629382A (en) | 1981-03-24 |
Family
ID=14395641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10499479A Pending JPS5629382A (en) | 1979-08-20 | 1979-08-20 | Light emitting device of double hetero structure and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629382A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213179A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Light emitting element |
| EP0576105A2 (en) * | 1988-07-05 | 1993-12-29 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light emitting diode |
-
1979
- 1979-08-20 JP JP10499479A patent/JPS5629382A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213179A (en) * | 1983-05-19 | 1984-12-03 | Toshiba Corp | Light emitting element |
| EP0576105A2 (en) * | 1988-07-05 | 1993-12-29 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light emitting diode |
| EP0576105A3 (en) * | 1988-07-05 | 1994-05-18 | Hewlett Packard Co | P-side up double heterojunction algaas light emitting diode |
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