JPS54152879A - Structure of semiconductor laser element and its manufacture - Google Patents

Structure of semiconductor laser element and its manufacture

Info

Publication number
JPS54152879A
JPS54152879A JP6185378A JP6185378A JPS54152879A JP S54152879 A JPS54152879 A JP S54152879A JP 6185378 A JP6185378 A JP 6185378A JP 6185378 A JP6185378 A JP 6185378A JP S54152879 A JPS54152879 A JP S54152879A
Authority
JP
Japan
Prior art keywords
layer
type
electrode
substrate
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6185378A
Other languages
Japanese (ja)
Other versions
JPS5733878B2 (en
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6185378A priority Critical patent/JPS54152879A/en
Publication of JPS54152879A publication Critical patent/JPS54152879A/en
Publication of JPS5733878B2 publication Critical patent/JPS5733878B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To secure the utilization of the supercooling layer formation method and thus to obtain the active layer with a high reproducibility with no defect of under 0.3μm nor the distortion by providing previously the belt- or stripe-type convexity on the surface of the compound semiconductor substrate.
CONSTITUTION: The belt- or stripe-type convexity of about 1μm height and 5μm wide is formed by the photo etching at the center part on the surface of N-type GaAs substrate 7(A), and N-type Ga1-xAlAs layer 8, P-type GaAs active layer 9, P-type Ga1-XAlYAs layer 10 and P-type GaAs layer 11 are continuously grown through the epitaxial growing method on the entire surface including the convexity. In this case, the maximum holding temperature and the cooling speed are set to 800°C/min. constantly each for the fusing solution used for formation of the grown layer, and the solution is coated over the substrate when it features 794°C. At the same time, the growing surface is wetted with different solution of the same condition for lamination. After this, stripe electrode 12 of Al2O3 is formed at the areas except that right above the mesa part of layer 11, and P-type electrode 13 and N- type electrode 14 are coated over the exposed region of layer 11 as well as on both surfaces of substrate 7 (A) each over electrode 12.
COPYRIGHT: (C)1979,JPO&Japio
JP6185378A 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture Granted JPS54152879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6185378A JPS54152879A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6185378A JPS54152879A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Publications (2)

Publication Number Publication Date
JPS54152879A true JPS54152879A (en) 1979-12-01
JPS5733878B2 JPS5733878B2 (en) 1982-07-20

Family

ID=13183064

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6185378A Granted JPS54152879A (en) 1978-05-23 1978-05-23 Structure of semiconductor laser element and its manufacture

Country Status (1)

Country Link
JP (1) JPS54152879A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110283A (en) * 1980-02-04 1981-09-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of embedded circuit structure-type semiconductor laser device
JPS58193654U (en) * 1982-06-18 1983-12-23 三洋電機株式会社 semiconductor laser
JPS5979590A (en) * 1982-10-27 1984-05-08 ア−ルシ−エ−　コ−ポレ−ション Semiconductor laser
JPS59165483A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor laser
JPS60176225A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial crowth method
US4630279A (en) * 1982-02-03 1986-12-16 Hitachi, Ltd. Buried heterojunction laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS52127085A (en) * 1976-04-16 1977-10-25 Hitachi Ltd Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS52127085A (en) * 1976-04-16 1977-10-25 Hitachi Ltd Semiconductor laser

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110283A (en) * 1980-02-04 1981-09-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of embedded circuit structure-type semiconductor laser device
US4630279A (en) * 1982-02-03 1986-12-16 Hitachi, Ltd. Buried heterojunction laser
JPS58193654U (en) * 1982-06-18 1983-12-23 三洋電機株式会社 semiconductor laser
JPS5979590A (en) * 1982-10-27 1984-05-08 ア−ルシ−エ−　コ−ポレ−ション Semiconductor laser
JPS59165483A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor laser
JPS60176225A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Liquid-phase epitaxial crowth method

Also Published As

Publication number Publication date
JPS5733878B2 (en) 1982-07-20

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