JPS55123189A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS55123189A
JPS55123189A JP3025779A JP3025779A JPS55123189A JP S55123189 A JPS55123189 A JP S55123189A JP 3025779 A JP3025779 A JP 3025779A JP 3025779 A JP3025779 A JP 3025779A JP S55123189 A JPS55123189 A JP S55123189A
Authority
JP
Japan
Prior art keywords
layer
type
depression
grown
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3025779A
Other languages
Japanese (ja)
Other versions
JPS5639070B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3025779A priority Critical patent/JPS55123189A/en
Priority to GB8001589A priority patent/GB2046983B/en
Priority to US06/113,161 priority patent/US4321556A/en
Priority to DE19803001843 priority patent/DE3001843A1/en
Publication of JPS55123189A publication Critical patent/JPS55123189A/en
Publication of JPS5639070B2 publication Critical patent/JPS5639070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a high-output basic horizontal mode, by a method wherein a strip-shaped depression is formed on the surface of a semiconductor substrate, and a guide layer and a photon-sealing layer are provided on the upper and lower sides of a layer which becomes an active region at the time of liquid-phase epitaxial growth. CONSTITUTION:A photoresist film 21 having an opening is provided on an n-type GaAs substrate 10 having surface [100]. By chemical etching, depression 19 forming a stripe in the direction (110) is produced in the substrate 10 exposed in the opening. Next, the film 21 is removed, and an n-type Al0.38Ga0.62As layer 11, which is to become a layer to seal in photons and carriers, is epitaxially grown in liquid phase on the entire surface along the shape of depression 19. On top of this is grown an n-type Al0.1Ga0.9As light guide layer 12 with its upper surface made flat. Subsequently, a p-type GaAs active layer 13, a p-type Al0.38Ga0.62As layer 14 which functions same as the layer 11, and a p-type GaAs contact-easy layer 16 are laminated and grown on top of this. In this structure, a forward bias is impressed on the junction 20 between the layers 12 and 13.
JP3025779A 1979-01-18 1979-03-15 Manufacture of semiconductor laser Granted JPS55123189A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3025779A JPS55123189A (en) 1979-03-15 1979-03-15 Manufacture of semiconductor laser
GB8001589A GB2046983B (en) 1979-01-18 1980-01-17 Semiconductor lasers
US06/113,161 US4321556A (en) 1979-01-18 1980-01-18 Semiconductor laser
DE19803001843 DE3001843A1 (en) 1979-01-18 1980-01-18 SEMICONDUCTOR LASER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3025779A JPS55123189A (en) 1979-03-15 1979-03-15 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS55123189A true JPS55123189A (en) 1980-09-22
JPS5639070B2 JPS5639070B2 (en) 1981-09-10

Family

ID=12298646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3025779A Granted JPS55123189A (en) 1979-01-18 1979-03-15 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55123189A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758535A (en) * 1986-05-31 1988-07-19 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor laser
US5939734A (en) * 1997-02-21 1999-08-17 Sony Corporation Semiconductor light emitting device and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391682A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391682A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758535A (en) * 1986-05-31 1988-07-19 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor laser
US5939734A (en) * 1997-02-21 1999-08-17 Sony Corporation Semiconductor light emitting device and method of fabricating the same

Also Published As

Publication number Publication date
JPS5639070B2 (en) 1981-09-10

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