JPS55125690A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS55125690A JPS55125690A JP3374079A JP3374079A JPS55125690A JP S55125690 A JPS55125690 A JP S55125690A JP 3374079 A JP3374079 A JP 3374079A JP 3374079 A JP3374079 A JP 3374079A JP S55125690 A JPS55125690 A JP S55125690A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- substrate
- type
- becoming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To provide stable lateral mode oscillation of a semiconductor laser by forming a slender groove at the center on the surface of a semiconductor substrate, growing a flat photon enclosure layer on the substrate while burying the groove, and laminating a guide layer, an active layer and a carrier enclosure layer thereon to grow them.
CONSTITUTION: A stripe recess groove 17 is formed on an n-type GaAs substrate 9 in vertical direction to the reflecting surface of a resonator at the center of the surface of the substrate 9, an n-type Al0.3Ga0.7As layer 10' becoming a photon enclosure layer is grown on the entire surface including the groove 17, and the same material 10 is buried on the groove 17. Then, n-type Al0.1Ga0.09As layer 11 becoming a photoguide and carrier enclosure layer, p-type GaAs layer 12 as an active layer, p-type Al0.3Ga0.7As layer 13 becoming a photon and carrier enclosure layer and p-type GaAs easily contacting layer 14 are laminated and grown on the layer 10'. Then, predetermined width positive electrode 16 is coated on the layer 14, and the negative electrode 15 is coated on the back surface of the substrate 9 to bias the rectifying junction 18 produced between the layers 11 and 12 in forward direction.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374079A JPS55125690A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374079A JPS55125690A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55125690A true JPS55125690A (en) | 1980-09-27 |
Family
ID=12394800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3374079A Pending JPS55125690A (en) | 1979-03-22 | 1979-03-22 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125690A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789290A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser element |
| JPS5834987A (en) * | 1981-08-18 | 1983-03-01 | ゼロツクス・コ−ポレ−シヨン | Injection laser |
| US4792960A (en) * | 1984-04-24 | 1988-12-20 | Sharp Kabushiki Kaisha | Semiconductor laser |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS5290280A (en) * | 1976-01-22 | 1977-07-29 | Nec Corp | Semiconductor laser element |
-
1979
- 1979-03-22 JP JP3374079A patent/JPS55125690A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
| JPS5290280A (en) * | 1976-01-22 | 1977-07-29 | Nec Corp | Semiconductor laser element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789290A (en) * | 1980-11-25 | 1982-06-03 | Sharp Corp | Semiconductor laser element |
| JPH0227829B2 (en) * | 1980-11-25 | 1990-06-20 | Sharp Kk | |
| JPS5834987A (en) * | 1981-08-18 | 1983-03-01 | ゼロツクス・コ−ポレ−シヨン | Injection laser |
| US4792960A (en) * | 1984-04-24 | 1988-12-20 | Sharp Kabushiki Kaisha | Semiconductor laser |
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