JPS56112786A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS56112786A
JPS56112786A JP1452980A JP1452980A JPS56112786A JP S56112786 A JPS56112786 A JP S56112786A JP 1452980 A JP1452980 A JP 1452980A JP 1452980 A JP1452980 A JP 1452980A JP S56112786 A JPS56112786 A JP S56112786A
Authority
JP
Japan
Prior art keywords
layer
exposed
clad
light
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452980A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452980A priority Critical patent/JPS56112786A/en
Publication of JPS56112786A publication Critical patent/JPS56112786A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the deterioration of the reflecting surface of the semiconductor laser at the light with the side surface due to the mutual action between the light and the semiconductor material with the reflecting surface by burying the active layer with a layer having larger forbidden band width than the active layer. CONSTITUTION:A structure that a light waveguide layer 13 and active layers 14 formed thereon are interposed between two clad layers 12 and 15 is formed in the step of epitaxially growing in liquid phase at first stage. Then, the clad layers 12, 15 are removed by selective etching until the boundary with the semiconductor substrate is exposed, and mesa stripe is formed thereon, and the clad layer 15 is removed by second selective etching until the boundary with the layer 14 is exposed, and mesa striped part is insularly formed thereon. The part exposed and the exposed portion of the semiconductor substrate are melt back of the active layer and removed in the step of epitaxially growing in liquid phase at second stage, and the clad layer 16 having larger forbidden band width is grown via the light waveguide layer.
JP1452980A 1980-02-08 1980-02-08 Manufacture of semiconductor laser Pending JPS56112786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452980A JPS56112786A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452980A JPS56112786A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112786A true JPS56112786A (en) 1981-09-05

Family

ID=11863658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452980A Pending JPS56112786A (en) 1980-02-08 1980-02-08 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112786A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
EP0713275A1 (en) * 1994-11-19 1996-05-22 Lg Electronics Inc. Method for fabricating a semiconductor laser diode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924084A (en) * 1972-06-26 1974-03-04
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
DE3924197C2 (en) * 1988-07-22 1996-09-26 Mitsubishi Electric Corp Semiconductor laser
EP0713275A1 (en) * 1994-11-19 1996-05-22 Lg Electronics Inc. Method for fabricating a semiconductor laser diode

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