JPS5778193A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5778193A
JPS5778193A JP14213281A JP14213281A JPS5778193A JP S5778193 A JPS5778193 A JP S5778193A JP 14213281 A JP14213281 A JP 14213281A JP 14213281 A JP14213281 A JP 14213281A JP S5778193 A JPS5778193 A JP S5778193A
Authority
JP
Japan
Prior art keywords
layer
film
active layer
layers
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14213281A
Other languages
Japanese (ja)
Other versions
JPS5943839B2 (en
Inventor
Takashi Kajimura
Kazutoshi Saito
Noriyuki Shige
Michiharu Nakamura
Junichi Umeda
Masayoshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14213281A priority Critical patent/JPS5943839B2/en
Publication of JPS5778193A publication Critical patent/JPS5778193A/en
Publication of JPS5943839B2 publication Critical patent/JPS5943839B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a laser luminous flux having excellent parallelism and small beam diverging angle by interposing an extremely thin active layer with semiconductor layers having refractive index smaller than that of the active layer and burying them in a semiconductor having larger forbidden band width then the active layer and larger refractive index than the semiconductors disposed at both sides of the active layer. CONSTITUTION:An N type AlyGa1-yAs layer 2', an undoped AlxGa1-xAs acitve layer 1 and a P type AlyGa1-yAs layer 2 are sequentially laminated on an N type GaAs substrate 4, are epitaxially grown in liquid phase, and with an SiO film as a mask they are selectively etched to form the layer 1 interposed between the layers 2 and 2' in a stripe shape. Then, the stripe region is surrounded by Al2Ga1-zAs layer 3, the entire region is covered with Al2O3 film 5 and phosphorus silicate glass film 6, a hole is formed on the striped region, an ohmic electrode 8 extending on the film 6 is covered in contact with the layer 2, and an electrode 7 is mounted on the back surface of the substrate 4. In the structure the refractive indexes of the layers 1,2 and 2',3 are n2, n2'<n3, <n1,and the forbidden band width of the layer 1 is selected to be smaller than the layer 3.
JP14213281A 1981-09-09 1981-09-09 semiconductor laser Expired JPS5943839B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14213281A JPS5943839B2 (en) 1981-09-09 1981-09-09 semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14213281A JPS5943839B2 (en) 1981-09-09 1981-09-09 semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5778193A true JPS5778193A (en) 1982-05-15
JPS5943839B2 JPS5943839B2 (en) 1984-10-24

Family

ID=15308107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14213281A Expired JPS5943839B2 (en) 1981-09-09 1981-09-09 semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5943839B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0185854A2 (en) * 1984-09-26 1986-07-02 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
EP0742622A2 (en) * 1995-03-27 1996-11-13 Mitsubishi Cable Industries, Ltd. Laser diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0185854A2 (en) * 1984-09-26 1986-07-02 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
EP0185854A3 (en) * 1984-09-26 1987-09-23 Siemens Aktiengesellschaft Buried heterostructure semiconductor laser diode
EP0742622A2 (en) * 1995-03-27 1996-11-13 Mitsubishi Cable Industries, Ltd. Laser diode
EP0742622A3 (en) * 1995-03-27 1997-02-19 Mitsubishi Cable Ind Ltd Laser diode

Also Published As

Publication number Publication date
JPS5943839B2 (en) 1984-10-24

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