JPS56100488A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS56100488A
JPS56100488A JP276680A JP276680A JPS56100488A JP S56100488 A JPS56100488 A JP S56100488A JP 276680 A JP276680 A JP 276680A JP 276680 A JP276680 A JP 276680A JP S56100488 A JPS56100488 A JP S56100488A
Authority
JP
Japan
Prior art keywords
end surface
film
layer
resonator end
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP276680A
Other languages
Japanese (ja)
Inventor
Yuichi Shimizu
Kunio Ito
Takashi Sugino
Masaru Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP276680A priority Critical patent/JPS56100488A/en
Publication of JPS56100488A publication Critical patent/JPS56100488A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Abstract

PURPOSE:To obtain a high output with a low current by a method wherein a double film of SiO2 film and Si film is provided on one end surface of two resonator end surfaces composing the laser device so as to raise an end-surface reflection ratio, while SiO2 film alone is connected to the other end surface so as to lower the ratio. CONSTITUTION:On an N type GaAs substrate 5, an N type Ga0.7Al0.3As layer 6, a Ga0.95Al0.05As active layer 7, a P type Ga0.7Al0.3As layer 8 and a P type GaAS layer 9 are laminated and made to grow, while to the layer 9 is connected a positive electrode 10 having a stripe 15, and to the back surface of the substrate 5 is connected a negative electrode 11. Next, on one cloven resonator end surface of the main body of the laser thus constituted, a 1/4 wavelength SiO2 film 12 and a 1/4 wavelegnth Si film 13 are laminated and connected thereto, while to the other resonator end surface only the SiO2 film 14 is connected. The reflection ratio of one resonator end surface is made high, while that of the other resonator end surface low in this way, and therefore, the current required for obtaining a high output is made less than that required for an ordinary laser device.
JP276680A 1980-01-14 1980-01-14 Semiconductor laser device Pending JPS56100488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP276680A JPS56100488A (en) 1980-01-14 1980-01-14 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP276680A JPS56100488A (en) 1980-01-14 1980-01-14 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS56100488A true JPS56100488A (en) 1981-08-12

Family

ID=11538454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP276680A Pending JPS56100488A (en) 1980-01-14 1980-01-14 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56100488A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039881A (en) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> Distributed feedback type semiconductor laser
JPS60242689A (en) * 1984-05-16 1985-12-02 Sharp Corp Semiconductor laser element
JPH0451581A (en) * 1990-06-19 1992-02-20 Toshiba Corp Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039881A (en) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> Distributed feedback type semiconductor laser
JPS60242689A (en) * 1984-05-16 1985-12-02 Sharp Corp Semiconductor laser element
JPH0451581A (en) * 1990-06-19 1992-02-20 Toshiba Corp Semiconductor laser device

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