JPS55140286A - Buried heterogeneous structure semiconductor for use in laser - Google Patents

Buried heterogeneous structure semiconductor for use in laser

Info

Publication number
JPS55140286A
JPS55140286A JP4752779A JP4752779A JPS55140286A JP S55140286 A JPS55140286 A JP S55140286A JP 4752779 A JP4752779 A JP 4752779A JP 4752779 A JP4752779 A JP 4752779A JP S55140286 A JPS55140286 A JP S55140286A
Authority
JP
Japan
Prior art keywords
layer
clad
refractive index
grown
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4752779A
Other languages
Japanese (ja)
Inventor
Haruki Kurihara
Naoto Mogi
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4752779A priority Critical patent/JPS55140286A/en
Publication of JPS55140286A publication Critical patent/JPS55140286A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain stable high output of a buried heterogeneous structure semiconductor for use in laser by interposing a core layer between first and second clad layers from above and below thereof while retaining different refractive indexes and enclosing the first and second clad layers with third clad layer in the state such that the core layer is impregnated. CONSTITUTION:First clad layer 22 of Al0.4Ga0.6As having 3.32 of refractive index grown in the center on the surface of an n-type GaAs substrate 25. Then, a core layer 21 of Al0.1Ga0.9As having 3.52 of refractive index is formed narrower than the width of the layer 22 thereon, and a second clad layer 23 having the same refractive index and composition as the layer 22 is grown thereon. Thereafter the third clad layer 24 of Al0.25Ga0.75 Ga having 3.42 of refractive index impregnated into the side surface of the layer 21 having narrower width is grown on the side surface of the layer 21 as surrounding the layers 22 and 23, and a p<+>-type duffused layer 26 is formed on the surface layer of the layer 23. Thus, it can produce an output higher than 10mW while stabilizing the lateral mode in minimum degree.
JP4752779A 1979-04-18 1979-04-18 Buried heterogeneous structure semiconductor for use in laser Pending JPS55140286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4752779A JPS55140286A (en) 1979-04-18 1979-04-18 Buried heterogeneous structure semiconductor for use in laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4752779A JPS55140286A (en) 1979-04-18 1979-04-18 Buried heterogeneous structure semiconductor for use in laser

Publications (1)

Publication Number Publication Date
JPS55140286A true JPS55140286A (en) 1980-11-01

Family

ID=12777584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4752779A Pending JPS55140286A (en) 1979-04-18 1979-04-18 Buried heterogeneous structure semiconductor for use in laser

Country Status (1)

Country Link
JP (1) JPS55140286A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167981A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167980A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167979A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167978A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
EP0208209A2 (en) * 1985-06-27 1987-01-14 Nec Corporation A buried heterostructure semiconductor laser
JPH0345677U (en) * 1990-09-05 1991-04-26

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167981A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167980A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167979A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
JPS6167978A (en) * 1984-09-11 1986-04-08 Anritsu Corp Semiconductor laser
EP0208209A2 (en) * 1985-06-27 1987-01-14 Nec Corporation A buried heterostructure semiconductor laser
JPH0345677U (en) * 1990-09-05 1991-04-26

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