JPS5769793A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5769793A
JPS5769793A JP14548880A JP14548880A JPS5769793A JP S5769793 A JPS5769793 A JP S5769793A JP 14548880 A JP14548880 A JP 14548880A JP 14548880 A JP14548880 A JP 14548880A JP S5769793 A JPS5769793 A JP S5769793A
Authority
JP
Japan
Prior art keywords
layer
refractive index
active layer
type
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14548880A
Other languages
Japanese (ja)
Inventor
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14548880A priority Critical patent/JPS5769793A/en
Publication of JPS5769793A publication Critical patent/JPS5769793A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate manufacture and to make characteistic of a semiconductor laser device as favorable and to be stabilized by a method wherein a guide layer is interposed between an active layer and a clad layer, and the sides of the active layer and the contacting part between the sides thereof and the guide layer is covered with as insulator. CONSTITUTION:The N type GaAlAs clad layer 2, the guide layer 12 constituted of N type GaAlAs, the active layer 3, a P type GaAlAs clad layer 4, a P type GaAs layer 5 are formed in order on an N type GaAs substrate 1 by liquid phase epitaxy. The insulating film 13 constituted of SiO2 is formed as to cover the exposed upper face of the guide layer 12 and the side parts of the meas constituted of the active layer 3, the P type GaAlAs has the refractive index larger than the refractive index of the GaAlAs clad layer 2, and smaller than the refractive index of the active layer 3. The insulating film 13 has smaller refractive index than respective semiconductor layers.
JP14548880A 1980-10-16 1980-10-16 Semiconductor laser device Pending JPS5769793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14548880A JPS5769793A (en) 1980-10-16 1980-10-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14548880A JPS5769793A (en) 1980-10-16 1980-10-16 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5769793A true JPS5769793A (en) 1982-04-28

Family

ID=15386414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14548880A Pending JPS5769793A (en) 1980-10-16 1980-10-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5769793A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408373A2 (en) * 1989-07-12 1991-01-16 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
EP0456429A2 (en) * 1990-05-07 1991-11-13 Kabushiki Kaisha Toshiba Semiconductor laser device
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
US6075801A (en) * 1995-01-18 2000-06-13 Nec Corporation Semiconductor laser with wide side of tapered light gain region

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5574193A (en) * 1978-11-28 1980-06-04 Nec Corp Manufacturing semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5574193A (en) * 1978-11-28 1980-06-04 Nec Corp Manufacturing semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0408373A2 (en) * 1989-07-12 1991-01-16 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
EP0456429A2 (en) * 1990-05-07 1991-11-13 Kabushiki Kaisha Toshiba Semiconductor laser device
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
US5717707A (en) * 1995-01-03 1998-02-10 Xerox Corporation Index guided semiconductor laser diode with reduced shunt leakage currents
US6075801A (en) * 1995-01-18 2000-06-13 Nec Corporation Semiconductor laser with wide side of tapered light gain region

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