JPS5724588A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5724588A
JPS5724588A JP10003780A JP10003780A JPS5724588A JP S5724588 A JPS5724588 A JP S5724588A JP 10003780 A JP10003780 A JP 10003780A JP 10003780 A JP10003780 A JP 10003780A JP S5724588 A JPS5724588 A JP S5724588A
Authority
JP
Japan
Prior art keywords
mesa
deterioration
active layer
resonance
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10003780A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10003780A priority Critical patent/JPS5724588A/en
Publication of JPS5724588A publication Critical patent/JPS5724588A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prohibit deterioration, by providing a resonance surface at only the central part of a mesa, liberating the lattice strain applied to an active layer from both sides of the mesa, and making the transverse mode single. CONSTITUTION:An inverted-triangle-shaped resonance surface 13 is formed at the central part, at one side of the mesa 12 on a GaAs substrate 1. According to such a mesa stripe type semiconductor laser apparatus, laser emittance is carried out at only the part included in the resonance in the resonance face 13 of an AlyGa1-yAs layers 3 as an active layer but not carried out at the section near the mesa side 12a. Accordingly, the transverse mode is made single, and it is not apt to become the cause of deterioration. In addition, the strain generated in the active layer due to the difference of the lattice constants of grown crystals is liverated. Accordingly, deterioration can be prohibited.
JP10003780A 1980-07-21 1980-07-21 Semiconductor laser device Pending JPS5724588A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10003780A JPS5724588A (en) 1980-07-21 1980-07-21 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10003780A JPS5724588A (en) 1980-07-21 1980-07-21 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5724588A true JPS5724588A (en) 1982-02-09

Family

ID=14263320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10003780A Pending JPS5724588A (en) 1980-07-21 1980-07-21 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5724588A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123761A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Optical integrated circuit and its manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106784A (en) * 1973-02-12 1974-10-09
JPS5251884A (en) * 1975-10-22 1977-04-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106784A (en) * 1973-02-12 1974-10-09
JPS5251884A (en) * 1975-10-22 1977-04-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123761A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Optical integrated circuit and its manufacture

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