JPS5636184A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5636184A
JPS5636184A JP11136479A JP11136479A JPS5636184A JP S5636184 A JPS5636184 A JP S5636184A JP 11136479 A JP11136479 A JP 11136479A JP 11136479 A JP11136479 A JP 11136479A JP S5636184 A JPS5636184 A JP S5636184A
Authority
JP
Japan
Prior art keywords
groove
semiconductor layers
substrate
manufacture
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11136479A
Other languages
Japanese (ja)
Other versions
JPS6257118B2 (en
Inventor
Yoshinari Matsumoto
Yuichi Ide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11136479A priority Critical patent/JPS5636184A/en
Publication of JPS5636184A publication Critical patent/JPS5636184A/en
Publication of JPS6257118B2 publication Critical patent/JPS6257118B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Abstract

PURPOSE:To improve characteristics and the yield of manufacture, by using a substrate having a groove along a portion to be a waveguide. CONSTITUTION:A groove 32 is provided on an N type GaAs substrate 11. At least two continuous semiconductor layers are made on the surface of the substrate 11 having the groove 32, thereby changing the groove into a flat surface. Both the semiconductor layers on the band groove 32 are then removed by mesa etching so that at least a part of the semiconductor layers is left. After both continuous semiconductor layers exposed to at least mesa-etched sides are covered with a new semiconductor layer, the substrate is cleft perpendicularly to the longitudinal direction of wide part 322 of the groove 32.
JP11136479A 1979-08-31 1979-08-31 Manufacture of semiconductor laser Granted JPS5636184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11136479A JPS5636184A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11136479A JPS5636184A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5636184A true JPS5636184A (en) 1981-04-09
JPS6257118B2 JPS6257118B2 (en) 1987-11-30

Family

ID=14559312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11136479A Granted JPS5636184A (en) 1979-08-31 1979-08-31 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5636184A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5963788A (en) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol Semiconductor laser
US4545057A (en) * 1982-08-30 1985-10-01 Sharp Kabushiki Kaisha Window structure of a semiconductor laser
US4546481A (en) * 1982-05-28 1985-10-08 Sharp Kabushiki Kaisha Window structure semiconductor laser
JPH06105785A (en) * 1992-09-04 1994-04-19 Daewoo Electron Co Ltd Dish washing machine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546481A (en) * 1982-05-28 1985-10-08 Sharp Kabushiki Kaisha Window structure semiconductor laser
US4545057A (en) * 1982-08-30 1985-10-01 Sharp Kabushiki Kaisha Window structure of a semiconductor laser
JPS5963788A (en) * 1982-10-04 1984-04-11 Agency Of Ind Science & Technol Semiconductor laser
JPS6343909B2 (en) * 1982-10-04 1988-09-01 Kogyo Gijutsuin
JPH06105785A (en) * 1992-09-04 1994-04-19 Daewoo Electron Co Ltd Dish washing machine

Also Published As

Publication number Publication date
JPS6257118B2 (en) 1987-11-30

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