JPS5333080A - Light emitting semiconductor device and its production - Google Patents

Light emitting semiconductor device and its production

Info

Publication number
JPS5333080A
JPS5333080A JP10759076A JP10759076A JPS5333080A JP S5333080 A JPS5333080 A JP S5333080A JP 10759076 A JP10759076 A JP 10759076A JP 10759076 A JP10759076 A JP 10759076A JP S5333080 A JPS5333080 A JP S5333080A
Authority
JP
Japan
Prior art keywords
production
light emitting
semiconductor device
emitting semiconductor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10759076A
Other languages
Japanese (ja)
Other versions
JPS5433960B2 (en
Inventor
Takashi Fukui
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10759076A priority Critical patent/JPS5333080A/en
Publication of JPS5333080A publication Critical patent/JPS5333080A/en
Publication of JPS5433960B2 publication Critical patent/JPS5433960B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase external efficiency by making the thickness of the active layer at the end face for radiating laser thicker than the thickness at the end face on the opposite side.
JP10759076A 1976-09-08 1976-09-08 Light emitting semiconductor device and its production Granted JPS5333080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10759076A JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10759076A JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5333080A true JPS5333080A (en) 1978-03-28
JPS5433960B2 JPS5433960B2 (en) 1979-10-24

Family

ID=14463002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10759076A Granted JPS5333080A (en) 1976-09-08 1976-09-08 Light emitting semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5333080A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562693A (en) * 1979-06-20 1981-01-12 Agency Of Ind Science & Technol Semiconductor laser device
JPS564293A (en) * 1979-06-25 1981-01-17 Agency Of Ind Science & Technol Manufacture of semiconductor laser device
JPS5636183A (en) * 1979-08-31 1981-04-09 Nec Corp Semiconductor laser and manufacture thereof
JPS5642393A (en) * 1979-09-12 1981-04-20 Nec Corp Semiconductor laser
JPS5645090A (en) * 1979-09-20 1981-04-24 Nec Corp Semiconductor laser
JPS58102588A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562693A (en) * 1979-06-20 1981-01-12 Agency Of Ind Science & Technol Semiconductor laser device
JPS564293A (en) * 1979-06-25 1981-01-17 Agency Of Ind Science & Technol Manufacture of semiconductor laser device
JPS5636183A (en) * 1979-08-31 1981-04-09 Nec Corp Semiconductor laser and manufacture thereof
JPS5642393A (en) * 1979-09-12 1981-04-20 Nec Corp Semiconductor laser
JPS5645090A (en) * 1979-09-20 1981-04-24 Nec Corp Semiconductor laser
JPS58102588A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
US5087587A (en) * 1986-02-13 1992-02-11 Sharp Kabushiki Kaisha Epitaxial growth process for the production of a window semiconductor laser
US5047364A (en) * 1988-06-27 1991-09-10 Mitsubishi Denki Kabushiki Kaisha Method for making a multi-point emission type semiconductor laser device

Also Published As

Publication number Publication date
JPS5433960B2 (en) 1979-10-24

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