JPS58102586A - Semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To provide a semiconductor laser characterized by a low oscillation threshold current and high differential quantum efficiency, by providing a multiple layer semiconductor layers having a double heterostruction structure and multiple layer semiconductor layers including a core layer. CONSTITUTION:A positive voltage is applied to a P side electrode 21 and a negative volage is applied to an N side electrode 22. Carriers are inputted only to an active layer 18, which is completely embedded in a concave part 16 by P-N reverse bias of epitaxial layers 12, 13, and 14. Light emission is obtained by recombination. The carriers are completely confined in the active layer 18 by clad layers 17 and 19, and the core layer 13. The laser light generated from the active layer 18 is guided by the clad layer 17 and 19 whose refractive index is smaller than that of the active layer 18 and recombined to the epitaxial layers 12, 13, and 14. The light guided into the active layer 18 is again guided into the core layer 13 by clad layers 12 and 14, and resonated between the cleavage planes. The laser light generated in the active layer 18 is confined in the core layer 13 in the lateral direction, and oscillated at a stable fundamental mode.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a light emitting device having an output light guide tIL path. Comparing to the small melo S4 efficiency table, it has the advantage of short lifespan and flat speed direct performance modulation.
O, which is used as the source of a practical system for optical transmission and former information processing tombs, is used as a light source in the field of emotional processing. In a semicircular laser made of a ternary compound of gallium Φ aluminum arsenic (-ALAs), what determines the limit of the laser output is the destruction caused by the laser J211I round, and this optical damage. This is caused by light absorption near Lede 4 blood due to insufficient population inversion of carriers due to surface recombination.

Therefore, in order to make the laser 4-output, it is effective to not inject the intermediate layer near the V-za 41iO and to absorb light in the t-#h area.9 From this, the laser end face fjtxKrli
Note: Provide an output-only waveguide that does not get caught in A+1, and connect the 7 tV source generated in the rear 4th layer to this output interrogation path.
The following shows the conditions necessary for a laser with 4 waves and 4 outputs to achieve higher output.IK high output In order to obtain t-, it is necessary to suppress the 4-circle breakage of the 4-circle break Jilt, and also to understand the % value of the molecular efficiency and the value of the This is due to the fact that the excitation current tItt- is low to avoid the occurrence of M caused by press-fitting in the Wt area, and to suppress the elongation caused by changes in temperature. Therefore, if you are a friend who satisfies the *requirements* of the Earth, I will give you electricity without going back.
tk young 4 艮〈As well as connecting to the output reading omission, the reduction of the first shift of the tk becomes dizzy, and the original number of confinement threads t in the old notes is optimized. After stabilizing the 1 oscillation transverse mode at 0#1s and changing to *g-original output I4 note, 'kink (the song in the current-original output property)'
It is necessary to eliminate the factors that cause the reduction in 4O imitation quantum efficiency. Therefore, it is necessary to control the transverse mode by incorporating the a-dimensional original waveguide device into the light emitting region.

(3) Conventional technology and problems - As a conventional technology, the present inventor has developed a system in which the active node is not used in the subordinate fcV-the vibration shoulder circle, and the output chain acid is connected to the original 4-wave route 4. -I'm going to raise the 4-saved laser that I got. A1
The figure is a schematic cross-section III parallel to the laser oscillation force direction of this semiconductor laser.

In Figure 1, l is n-type gallium hiJg(da((
hAs) similar to fi, 8 is n-type AL ()I As cladding layer, sense is p-type AtuaAs (5 note layer 1 is p-type A
jLiaAs cladding layer, 6 is p-type for storm-contact (
) aAs layer, 6 is a cross-layer for output light 4, 7 is a layer for output light guiding and shielding, 8 is n7 彪t) aAs layer, 9 is p
m'tl indignation, 10 respectively represent n taiden billion.

This laser has a core layer 7 on j[t41 and the core layer 7 on
19 An optical waveguide is provided with a small cladding layer 6 sandwiching the core layer from above and below, and a convex portion with a depth of 4 holes is provided in the original 4 waveguides, and within the curved portion. activity) −
8 and the activity 1m 11 engineering multi-system splitting is large and at
1m al t'Double hetero consisting of cladding layer 1 and cladding layer sandwiched from above and below! Ift Sobutsuzo's semiconductor no-all types are placed in contact with the active no. 8 and core layer 7, and the active no. 8 is generated and the dimension is coupled to the cocoon era waveguide 4
This is the next thing that makes waves.

Mayu, -saku is p[1 [*9 correct, n ill @ @ I
A negative voltage is applied to O, and the output optical waveguide is formed in half 4.
By modifying the p-n reverse bias of VFrv46-7-8, carrier gold is injected only into the active node 8 in the concave column, and by re-setting, the element jt,'0 is the cladding t with a low refractive index.
It is guided into the active layer 8 through the fa'jA and the board, and is connected to the former dictatorship provided in the output outer area. At this time, the cladding layer 6 forming one optical waveguide and the core layer 7 and 9 are also J.
For a friend with a low Ig folding table, the 46 waves in the active No. 8 are guided again into the core I-7 by the clad No. 6,
4Is - Since the 0 co-occurs between the planes, the active No. 8 is not excited by the 4@ when the laser oscillates, and the laser j411
Depending on the optical D4 temperature at O, the laser t Qi =! is low and has a high filtering effect of 4. However, you can
Since this laser does not take any measures to create a transverse mode t-11IJg4, the problem of "kink" l$ occurs due to the following reasons mentioned above, i.e., #ttlL-original output time. (4) Purpose of invention The purpose of non-invention is to remove the entrance point that conventional semiconductor lasers have, and to 0 (5) 4 @ configuration The present invention is based on the I old note and the -a old note. Note: No, p class book 1j regret 1-
is large and consists of a double hetero layer consisting of a clad layer sandwiching the IgI layer from above and below, and the core layer and the core layer are small and mtL Koano 11? 48 multi-no semiconductor layers consisting of a cladding layer sandwiched from the ground and gold, -11 first 41-Cow 4 sticks! -The above 42
The multi-no half of 4 nos are arranged in a hidden manner, and the punishment ml co1 no is placed adjacent to the -11th period active no.

16) Example A4 to F1 Using an embodiment of the present invention, the basic concentration of Fukui is made. Fig. 3 shows the manufacturing process of this embodiment, with four pieces of dipstick. - 6 O Jt in a perspective cross-sectional view of part #l of the part? jJKdi The manufacturing process of this example will be explained in detail using a diagram. On-type GaAs substrate 11
A 19n-type AtGa layer 1j1. , form At(iaAs core no la,
The n-type AjLjaAs node 79$14 is the l-Kuse crystal member 0. Here, the refractive index of the core layer 18 is the upper and lower Cladnos 1111! And 140 son engineering 9 also enlarged, former 4tjl
Shinfu also makes money. In addition, 44 units of AtGaAa-based material have an n-type G1 S layer 15t continuously formed on top of the above-mentioned 8 layers.
This is to facilitate the wetting of the GaAs layer 15 with the member liquid (Fig. 8 (-)). is approximately 1 μm, core no. 18 is 0.8 pmsn type GaAe mass is 0.8
It is pas. 48 In Figure 1a), there were 14 tons of chemical engineering in Nairyo-zukuri (or 8-layer denzo), and 100 people in Chingu.
~500IIm, -8-6μms depth reaches 44111, approximately 2.8~B, 6. um recess 16 is formed (FIG. 2 IW) o Next, in the liquid phase, an n-type AjGaAm cladding layer 17°p-type AjGmAm active layer 18 and p-type AtGaA are formed in the recess 16 by an epitaxial deposition method in the liquid phase.
s cladding layer 19. ]! p-type Ga for electrical contacts
At this time, the active layer 18 has a smaller system control fluorescence @ and a larger A111 4' than the epitaxial layer 1811811117.19, and the core layer 18 is formed so as to surround the active layer weight 8. I have to fit it in and rearrange it. 4M-like! ? ! rl-thickness of n-shaped rad layer 17 is IJ~g, o am%ia/ml 8 is 0
．． 1-2.0 μm.

The p-type quad 7119 is p-type (JaAsmjlG is 0.il) m until the Ifi plate surface 1 is almost flat.

In addition, when the epitaxial layers 17, 1B, and 1e are formed into a liquid phase, a layer thickness of 4 times thicker than the layer thickness formed in the recess 16 is also formed.
Shape u a A l no 20114 pllll [love g1
．． On the board 11 side.

l1IIE et al.
When the opening is 14 ft%, the light emitting device of this example is completed (Figure 2+cl).

The operation is positive on 914g421, negative pressure on n141 electric 2S) J Sushi, epitaxial) -1m, ■1.1
The carriers are injected only into the active layer 18 that is completely lumped into the recess 16 by the p-a reverse bias of 4, and the carriers are vertically injected into the active layer 18 to obtain the L element. Cladding layer 17.18% to 14% for Rikioka
=9 for each of the core layers 18 adjacent to the force direction, completely confined within the active layer 18. When the gain overcomes the loss with sufficient injection current, V-
The origin arises.

This source is derived from the active 1fjl18L and the cladding layers 17 and 19 with a high refractive index.
is combined with At this time, since the refractive index of the cladding layer 12 and the core W118 is low, the wave guided into the active layer 18 is again caused by the cladding layer 12 and the single layer to increase the internal pressure of the core layer 18 by 4 waves. There is a common loss. In transverse mode control, the core layer 18 with a low refractive index is provided in 114 contact with the active layer 18 in the laser iI411tm which is parallel to the dual-handed power rotation of the laser. It occurs in the active layer 18 and originates from the core layer 1.
8vcL is trapped between the lateral forces and digs in a stable fundamental mode, and as mentioned above, the conventional laser 9 also oscillates? jj4++i[# can be used to obtain a lede with a low accent and a high value denominator efficiency 0 Figure 8 is a -1I category diagram in an application example of Kishu. The same part as the part is indicated by lWl symbol.0 The difference between the non-applied example and the 4S example is that the active 41B) Jm folding table is small and the original guide and carrier confinement layer has a large forbidden band width. (abbreviated as light guide layer) SS and IB4t are laminated above and below the active layer 18.

In the non-application example, z8 is an n-type AtGaAh original guide layer, 24
is necessarily 0 in the p-type AtGaAs light guide layer.The production of this semiconductor laser will be explained in terms of quantity.

A positive voltage is applied to the voltage 81 and a negative voltage is applied to the voltage is, and carriers are injected into the active layer layer 8, and multiple lights are obtained by recombination.The carriers injected into the viscous layer 18 are vertically The nine-chihiro body layer 17.19°8&B#c is confined in the t-occupancy 418 by the core layer 8, which is in gentle contact with the lateral direction, and is originally an n-type light guide layer. 88 and p-type light guide layer z
O seeps into both % cladding layer weight with low refractive index 7 and! 9, this laser beam propagates through the active layer 18 and the original guide layer ga, 24, and forms the epitaxial layer 1.
Connected to fill@14.

According to this application example, by providing the original guide PIIIt and changing the composition and thickness of the original guide d to 'kK, KL can change the nine device distribution near the active 4, so the laser oscillation cocoon value t- It is possible to expand the range of conditions that can be satisfied with both the reduction of the number of confinement iM of the #1 Note l-circle and the improvement of the effect of the coupling of the original O with the output area. In FIG. 6, which shows an upward 1-fi circle diagram of the total reflection Jiv-zer in the modified example of the invention, 86 is an active region consisting of an active layer and cladding layers sandwiching the active layer from above and below; shows a reflective layer consisting of a core layer and a cladding layer sandwiching the core layer from above and below.

According to this modification, by increasing the refractive index difference between the active inertial region BIS and the reflection region S6, total reflection im is performed on the four surfaces of the active region z5, so that a low value V-za can be obtained.〇(7) Invention If it is built into a young fruit button, it will have more space than a conventional laser, and it will be possible to use a semiconductor laser with imitative splitter efficiency.

[Brief explanation of the drawing]

41A is a schematic cross-sectional view parallel to the laser oscillation direction of a conventional half-four body laser, and FIG.
Figure 148 is a partially broken dOL diagram of the cow 4-barrow laser shown in Figure 4, a partly broken wR view in an application example of the invention, and Figure 44 is a fully broken dOL diagram of the cow 4-barrow laser in a modified example of the present invention. L! o
Cross-sectional view of 01.17 n-type AtGa Am
Cladding layer B I i 8 p type Aj (Ja
As active layer 4.19 9 type kl Cka As
Cladding layer @, l! , 14 Output light 4 cladding layer 7 for axillary route 9,
at p 稠稠熾10 # m +an @ Den reef iim, a meeting former guide layer S6 active octopus area

Claims (1)

[Scope of Claims] 0) To a double consisting of an active I- and a cladding L- which has a smaller refraction 4 than the active No, and a large amount of Jl and a large amount of Jl, and a clad l- which is sandwiched from below the -ml active mass. The 4Is of Butsuzou to Slow Terrorism
047- having a semiconductor layer, a core layer and a cladding layer having a smaller Al layer than the core layer and sandwiching the core layer from above and below,
Punishment l11c! mgl12) The multilayer semi-coated layer of flIJ4z is placed in contact with the periphery of the semiconductor layer so as to surround it. And +5! Said core around JK & OI-! Semiconductor light emitting device 011 which has four values when - is placed in instant contact
and the active 1I on at least one side of the anti-activating layer.
11) An original guide layer with a small refraction 4 and a large system allowance width and a carrier confinement function, and j1
! Above and below the active layer and the original guide layer #11] Era guide I - the refractor table is small, and the IIs discharge 1
- 1 CD consisting of a large cladding layer with 19 sub-layers
The fourth goa) layer half-four bodies I- are made up of four quarters of the four bodies, and the fourth half of the fourth body I-, which is small in size and consists of the core/11t and the crudnos sandwiched from above and below. has
The circumference of the 5gl multilayer semiconductor layer is #
- Considering the eighth multi-layer semi-woven body layer. Patent claim 011Q, characterized in that the core layer is disposed around the Ml period active no.