JPS56112782A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS56112782A JPS56112782A JP1452480A JP1452480A JPS56112782A JP S56112782 A JPS56112782 A JP S56112782A JP 1452480 A JP1452480 A JP 1452480A JP 1452480 A JP1452480 A JP 1452480A JP S56112782 A JPS56112782 A JP S56112782A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- face
- type
- active layer
- clad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To prevent the deterioration of the end face buried type semiconductor laser due to the mutual action between the light and the semiconductor material at the end face of the active layer of the laser by burying the end face of the active layer having a larger forbidden band width than the active layer. CONSTITUTION:An N type Al0.3Ga0.7As clad layer 12 and an N type Al0.15Ga0.85As light waveguide layer 13 are formed in stripe shape on an N type GaAs semiconductor substrate 11. A P type GaAs active layer 14 and a P type Al0.3Ga0.7As clad layer 15 are formed in stripe shape on the region isolated from the end face of the light emitting surface of the layer 13. Further, an N type Al0.3Ga0.7As clad layer 16 are so formed as to surround the layer 12, the layer 13, the active layer 14 and the clad layer 15 excluding the end face of the light emitting surface of the layer 13, thereby obtaining the secondary light waveguide function even in the buried portion of the end face of the layer 14.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1452480A JPS56112782A (en) | 1980-02-08 | 1980-02-08 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1452480A JPS56112782A (en) | 1980-02-08 | 1980-02-08 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56112782A true JPS56112782A (en) | 1981-09-05 |
Family
ID=11863493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1452480A Pending JPS56112782A (en) | 1980-02-08 | 1980-02-08 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56112782A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58102586A (en) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5952894A (en) * | 1982-09-20 | 1984-03-27 | Mitsubishi Electric Corp | Semiconductor laser |
EP0174635A2 (en) * | 1984-09-14 | 1986-03-19 | Siemens Aktiengesellschaft | Semiconductor laser for a high optical output power with reduced mirror heating |
JPS6399590A (en) * | 1986-10-15 | 1988-04-30 | Mitsubishi Electric Corp | Manunfacture of semiconductor laser |
DE3924197A1 (en) * | 1988-07-22 | 1990-04-05 | Mitsubishi Electric Corp | SEMICONDUCTOR LASER |
US5345460A (en) * | 1991-09-06 | 1994-09-06 | Sharp Kabushiki Kaisha | Semiconductor laser device with window regions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51104843A (en) * | 1975-03-11 | 1976-09-17 | Western Electric Co | |
JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
-
1980
- 1980-02-08 JP JP1452480A patent/JPS56112782A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51104843A (en) * | 1975-03-11 | 1976-09-17 | Western Electric Co | |
JPS51142283A (en) * | 1975-06-02 | 1976-12-07 | Nippon Telegr & Teleph Corp <Ntt> | Light emitting diode |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58102586A (en) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5952894A (en) * | 1982-09-20 | 1984-03-27 | Mitsubishi Electric Corp | Semiconductor laser |
EP0174635A2 (en) * | 1984-09-14 | 1986-03-19 | Siemens Aktiengesellschaft | Semiconductor laser for a high optical output power with reduced mirror heating |
JPS6399590A (en) * | 1986-10-15 | 1988-04-30 | Mitsubishi Electric Corp | Manunfacture of semiconductor laser |
DE3924197A1 (en) * | 1988-07-22 | 1990-04-05 | Mitsubishi Electric Corp | SEMICONDUCTOR LASER |
DE3924197C2 (en) * | 1988-07-22 | 1996-09-26 | Mitsubishi Electric Corp | Semiconductor laser |
US5345460A (en) * | 1991-09-06 | 1994-09-06 | Sharp Kabushiki Kaisha | Semiconductor laser device with window regions |
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